| Allicdata Part #: | NGTD30T120F2WP-ND |
| Manufacturer Part#: |
NGTD30T120F2WP |
| Price: | $ 3.12 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT TRENCH FIELD STOP 1200V DIE |
| More Detail: | IGBT Trench Field Stop 1200V Surface Mount Die |
| DataSheet: |  NGTD30T120F2WP Datasheet/PDF |
| Quantity: | 1000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 79 +: | $ 2.82790 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector Pulsed (Icm): | 200A |
| Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 40A |
| Switching Energy: | -- |
| Input Type: | Standard |
| Td (on/off) @ 25°C: | -- |
| Test Condition: | -- |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NGTD30T120F2WP (hereinafter referred to as the “IGBT”) is a single Insulated Gate Bipolar Transistor (IGBT) designed for use in power electronic applications. The device is made up of a MOSFET structure, which combines the low on-state voltage and fast switching capability of a MOSFET with the current carrying and switching capabilities of a bipolar transistor. This provides a higher power capability than traditional MOSFETs, making the IGBT ideal for a variety of power applications.The IGBT has a maximum voltage rating of 1200 volts DC, and a maximum drain-source current of 30 amps. It is available in a variety of packages, including the FS Ultimate (U) Surface Mount type, the PowerFLAT D2PAK, and the DPAK package. The IGBT is also available in both normally-on (N-channel) and normally-off (P-channel) configurations.The NGTD30T120F2WP IGBT can be used in a variety of applications, including motor control, renewable energy and power conversion, motor speed and torque control, lighting, and uninterruptible power supplies. It is also used in other applications such as audio, automotive, industrial, and medical applications.The IGBT has a number of advantages compared to other power semiconductor devices. It has high efficiency thanks to its low on-state voltage and low switching loss due to its fast switching capability. It also has superior current carrying capabilities and is able to handle high in-rush currents, making it suitable for high-power applications.The IGBT working principle is a combination of the MOSFET and bipolar transistor principles, as mentioned above. Essentially, the IGBT is made up of a MOSFET structure that has an additional N+ or P+ type region called the Emitter region. This structure is known as a heterojunction bipolar transistor (HBT), and provides the IGBT with the high current carrying capability and fast switching speed of a MOSFET coupled with the low on-state voltage of a bipolar transistor.In essence, the IGBT operates by controlling the voltage applied to the gate terminal. When the gate voltage is low, the transistor is turned off and the drain-source current is at its lowest possible value. When the gate voltage is increased, the electron flow through the channel increases, turning the transistor on and providing a source for the drain-source current.The IGBT is a popular choice for many power applications due to its high current carrying capability, low on-state voltage, and fast switching speed. Its ability to handle high in-rush currents makes it particularly useful for applications such as motor control, renewable energy, and power conversion. Its ease of use and low cost also make it an attractive choice for a variety of applications, such as audio, automotive, industrial, and medical applications.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "NGTD" Included word is 28
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NGTD13T65F2WP | ON Semicondu... | 1.23 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD14T65F2WP | ON Semicondu... | 1.23 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD13T65F2SWK | ON Semicondu... | 1.24 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD14T65F2SWK | ON Semicondu... | 1.24 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD17T65F2WP | ON Semicondu... | 1.44 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD17T65F2SWK | ON Semicondu... | 1.46 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD20T120F2WP | ON Semicondu... | 1.69 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD20T120F2SWK | ON Semicondu... | 1.72 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD21T65F2WP | ON Semicondu... | 1.78 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD21T65F2SWK | ON Semicondu... | 1.8 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD23T120F2WP | ON Semicondu... | 2.06 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD23T120F2SWK | ON Semicondu... | 2.07 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD28T65F2WP | ON Semicondu... | 2.81 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD28T65F2SWK | ON Semicondu... | 2.85 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD30T120F2WP | ON Semicondu... | 3.12 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD30T120F2SWK | ON Semicondu... | 3.14 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD5R65F2WP | ON Semicondu... | 0.24 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD5R65F2SWK | ON Semicondu... | 0.25 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD8R65F2WP | ON Semicondu... | 0.38 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD8R65F2SWK | ON Semicondu... | 0.39 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD9R120F2WP | ON Semicondu... | 0.41 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD9R120F2SWK | ON Semicondu... | 0.41 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD13R120F2WP | ON Semicondu... | 0.69 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD15R65F2WP | ON Semicondu... | 0.71 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD13R120F2SWK | ON Semicondu... | 0.71 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD15R65F2SWK | ON Semicondu... | 0.73 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD17R120F2WP | ON Semicondu... | 0.84 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD17R120F2SWK | ON Semicondu... | 0.85 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
Latest Products
IKW03N120H2FKSA1
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
AUXKNG4PH50S-215
IGBT 1200V TO247-3IGBT
AUIRG4PH50S-205
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
AUXMIGP4063D
IGBT 600V TO-247 COPAKIGBT
FGD3N60LSDTM-T
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
IXGM40N60AL
POWER MOSFET TO-3IGBT