NGTD23T120F2WP

Series:	--
Packaging:	Bulk
Lead Free Status / RoHS Status:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector Pulsed (Icm):	120A
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 25A
Switching Energy:	--
Input Type:	Standard
Td (on/off) @ 25°C:	--
Test Condition:	--
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Die

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The NGTD23T120F2WP belongs to a family of single IGBTs, which are power electronic components used in various applications. IGBTs are Transistors that use a metal-oxide semiconductor layer and a gate to regulate current flow. IGBTs offer both high-frequency switching and high current carrying capacity, making them highly sought for the design of power supplies and other power electronics in general. This article will cover the application field and the working principle of NGTD23T120F2WP.

Application Field

The NGTD23T120F2WP is used in a wide range of applications including motor drives, motion control, power supplies, DC-DC converters and lighting control. In particular, they are used in many applications involving high frequency switching, such as motor drives and PFC circuits. Due to the high current carrying capacity of the IGBT, the NGTD23T120F2WP can be used in high power applications as well, such as Uninterrupted Power Supply (UPS) systems, welding machines and high power battery chargers.

Working Principle

The NGTD23T120F2WP is composed of a layer of metal oxide semiconductor (MOS) and a gate between the collector and the emitter, just like other transistors. By applying a voltage to the gate, the current flowing in the MOS is controlled, allowing it to act as a switching device. When the gate voltage is at a negative potential, the IGBT is “off”, but when it is at a positive potential, electrons are allowed to flow, allowing the current to flow between the collector and the emitter.Due to the high current carrying capacity of the NGTD23T120F2WP, the device can operate at high frequency and provide high levels of power efficiency. This makes them ideal for applications such as motor drive, PFC circuits and DC-DC converters.The NGTD23T120F2WP is also capable of operating in both unipolar and bipolar modes, with the bipolar mode allowing for significant current gains compared to the unipolar mode. This makes the device flexible and well-suited for a wide range of application fields.

Conclusion

The NGTD23T120F2WP is a single IGBT designed for use in a variety of applications such as motor drives, power supplies and DC-DC converters. The device is composed of a MOS and a gate, allowing for the control of current flow. Additionally, the high current carrying capacity of the IGBT also allows for high frequency switching and high power efficiency. It can also operate in either unipolar or bipolar modes, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description