NGTD28T65F2SWK

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector Pulsed (Icm):	200A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 75A
Switching Energy:	--
Input Type:	Standard
Td (on/off) @ 25°C:	--
Test Condition:	--
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Die

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Introduction

The NGTD28T65F2SWK is a transistor class known as Insulated Gate Bipolar Transistor (IGBT), of the single-ended type, sometimes called “normally on” type, with a rating of 28V and 65A range. IGBTs are capable of controlling more power than ordinary bipolar transistors due to their higher current and voltage ratings, as well as their ability to handle higher frequency signals. The NGTD28T65F2SWK is designed to enable high-power switching in many applications.

Applications of the NGTD28T65F2SWK

The NGTD28T65F2SWK offers a number of advantages over other transistor classes, making it ideal for high-power switching applications. It is used in industrial motor control, solar inverters, UPS systems and protection logic, electric vehicle charging station power supplies, AC and DC motor drives, and any other applications that require high current ratings, reverse voltage protection and high efficiency switching.The NGTD28T65F2SWK also offers a number of additional features such as overvoltage protection and inrush current control. These features ensure that the NGTD28T65F2SWK is suitable for a variety of different applications.

Working Principle of the NGTD28T65F2SWK

The NGTD28T65F2SWK works using what is known as IGBT technology. IGBT, or insulated gate bipolar transistor, is a type of controlled switch which combines both MOSFET and bipolar junction transistor technology. This allows for power switching with both high efficiency and high power density.The NGTD28T65F2SWK works by using an insulated gate to control the flow of current between the source and drain of the transistor. When the gate is turned on by applying a gate signal, electrons are able to move freely through the transistor, allowing current to flow. When the gate is turned off, the electrons are blocked, stopping current flow. The insulated gate reduces power losses, increases efficiency, and allows the transistor to handle higher voltages. Additionally, the NGTD28T65F2SWK also has overvoltage protection, ensuring that the device is protected against any sudden voltage spikes.

Conclusion

The NGTD28T65F2SWK is a single-ended Insulated Gate Bipolar Transistor (IGBT) that is designed for high-power switching applications. It offers a number of advantages over other types of transistors, such as high current ratings, reverse voltage protection and high efficiency switching. Its insulated gate construction also reduces power losses and increases efficiency. The NGTD28T65F2SWK is suitable for a variety of applications, including industrial motor control, solar inverters, UPS systems and protection logic, electric vehicle charging station power supplies, AC and DC motor drives, and more.

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