NGTD17T65F2SWK Allicdata Electronics

NGTD17T65F2SWK Discrete Semiconductor Products

Allicdata Part #:

NGTD17T65F2SWK-ND

Manufacturer Part#:

NGTD17T65F2SWK

Price: $ 1.46
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT TRENCH FIELD STOP 650V DIE
More Detail: IGBT Trench Field Stop 650V Surface Mount Die
DataSheet: NGTD17T65F2SWK datasheetNGTD17T65F2SWK Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
146 +: $ 1.32861
Stock 1000Can Ship Immediately
$ 1.46
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Switching Energy: --
Input Type: Standard
Td (on/off) @ 25°C: --
Test Condition: --
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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Integrated Gate Turn-Off Transistors (IGBTs) are a type of power semiconductor used in modern electronic applications. They have become a popular choice as they combine some of the best features of both bipolar transistors and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) into one package. NGTD17T65F2SWK is a single IGBT that can be used in applications requiring high speeds, high efficiency and low power consumption.

The NGTD17T65F2SWK IGBT is designed for high frequency, high frequency switching applications. It has a maximum voltage rating of 17V and can handle up to 65A peak currents. It also has a maximum operating temperature of 175°C and is built with advanced packaging technology.

The NGTD17T65F2SWK IGBT is suitable for a range of applications, including motor drives, DC/AC converters, power supplies, motor controllers, solar inverters, and motor speed control. Its high speed capability and high current ratings make it ideal for applications that require high power efficiency and fast switching times.

The working principle of the NGTD17T65F2SWK IGBT is based on both bipolar transistor and MOSFET technology. In its structure, it has both an n-type (negative) and p-type (positive) layer. The n-type layer is the “gate” while the p-type layer is the “collector.” The gate is connected to the power source and acts as a switch. When the gate is turned off, the current is stopped. When it is turned on, current is allowed to flow.

The NGTD17T65F2SWK IGBT also uses a gate turn-off command. This is the feature that allows for fast switching and improved power efficiency. It enables the IGBT to be turned off and on rapidly, so that the current can be controlled precisely and quickly. This makes the IGBT suitable for fast switching applications such as motor drives and DC/AC converters.

In summary, the NGTD17T65F2SWK Single IGBT is an ideal choice for applications that require high power efficiency and fast switching times. It has a maximum voltage rating of 17V and can handle up to 65A peak current. It has built-in gate turn-off command, allowing for fast switching and improved power efficiency. It is suitable for a wide range of applications, such as motor drives, DC/AC converters, power supplies, motor controllers, solar inverters, and motor speed control.

The specific data is subject to PDF, and the above content is for reference

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