NGTD17T65F2WP Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NGTD17T65F2WP is a single insulated-gate bipolar transistor (IGBT) device, designed for use in medium-voltage industrial and commercial applications. This device is characterized by low on-state resistance, fast switching speed and good thermal performance. It is suitable for use in DC/DC conversion, active power factor correction, motor control and dynamic braking applications.

The NGTD17T65F2WP features a 4-layer insulated-gate structure and is constructed of three die in a hermetically sealed package. The upper die is composed of a vertically integrated N-Channel MOSFET and the lower die is composed of a planar N-Channel MOSFET structure. The middle die, which separates the upper and lower die, contains an insulation layer of aluminum oxide which not only protects the upper and lower dies from damage, but acts as the gate insulation for the entire device.

The working principle of the NGTD17T65F2WP is based on that of a MOSFET, with an additional insulated gate structure providing increased isolation between the gate and substrate. When a voltage is applied to the control terminal, or gate, of the IGBT transistor, a current flows across the insulated gate, allowing the current to flow between the collector and emitter of the device. This current flow causes the N-channel MOSFET to turn on, providing a low-resistance path between the collector and emitter.

The NGTD17T65F2WP is well-suited for applications requiring low on-state resistance and fast switching speed. It is capable of handling high-current, high-voltage and high-power operation, making it an ideal choice for use in power switching and control applications. Additionally, it has good thermal performance, making it suitable for burst mode operation and for high-frequency switching applications.

The NGTD17T65F2WP is widely used in DC/DC conversion, active power factor correction, motor control and dynamic braking applications. It is also used in inverters, UPS systems, commercial lighting systems and power distribution systems. Because of its ability to switch high amperage and voltage levels with low resistance, the NGTD17T65F2WP is used in a variety of power conversion and control applications, from small appliances and consumer electronics to industrial manufacturing equipment and automotive systems.

In summary, the NGTD17T65F2WP is an innovative single IGBT transistor device designed for use in a variety of medium-voltage industrial and commercial applications. It features low on-state resistance, fast switching speed and good thermal performance, making it particularly suitable for applications requiring high-current, power switching and control. The NGTD17T65F2WP is used in DC/DC conversion, active power factor correction, motor control and dynamic braking applications as well as in inverters, UPS systems and other power conversion and control systems.

The specific data is subject to PDF, and the above content is for reference