NM27C010N120 Allicdata Electronics
Allicdata Part #:

NM27C010N120-ND

Manufacturer Part#:

NM27C010N120

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EPROM 1M PARALLEL 32DIP
More Detail: EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 120...
DataSheet: NM27C010N120 datasheetNM27C010N120 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: --
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP
Base Part Number: NM27C010
Description

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NM27C010N120 is a 64K x 8 PROM, CMOS EPROM, electrically programmed and electrically erasable memory device, recommended for use in memory applications requiring low power dissipation and high speed operations. It implements two functions, namely, static static memory cell array and a static Read/Write control circuit. This device features a fast programming time and reliable operations for a variety of applications.

The NM27C010N120 memory device is particularly suited for applications where low power dissipation, speed, and ease of use are of prime importance. This device can be easily programmed and erased in the electronic environment, making it the ideal solution for applications needing frequent reprogramming or dynamic data storage. Its fast programming time, high speed operation, low power dissipation, and long data retention time make it an ideal choice for applications in the consumer, industrial and medical fields.

The working principle of NM27C010N120 memory device is based on CMOS and EPROM technologies. It contains a static static memory cell array, which stores the data and a static Read/Write control circuit, which enables the device to be easily programmed and erased. The device contains 64 KB of memory, which is accessed and written/read on a byte basis.

The NM27C010N120 memory device has a wide range of application fields. It can be used in a variety of memory and storage applications, such as computer main memory and disks, hard disks, memory cards, PDAs, and other embedded systems. It can also be used in automotive, industrial and medical applications. For example, it can be used in medical instruments that store patient records, or in industrial machines to store program data.

NM27C010N120 memory device is a reliable, low power dissipation and high speed solution for a variety of applications. It provides secure, fast, and reliable memory storage, and it is easy to program and erase in the electronic environment. The device’s fast programming time, high speed operation, and long data retention time make it ideal for a wide range of applications, from consumer, industrial and medical, to automotive and other embedded systems.

The specific data is subject to PDF, and the above content is for reference

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