Allicdata Part #: | NM27C256QE120-ND |
Manufacturer Part#: |
NM27C256QE120 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC EPROM 256K PARALLEL 28CDIP |
More Detail: | EPROM - UV Memory IC 256Kb (32K x 8) Parallel 120... |
DataSheet: | NM27C256QE120 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - UV |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 28-CDIP (0.600", 15.24mm) Window |
Supplier Device Package: | 28-CDIP |
Base Part Number: | NM27C256 |
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NM27C256QE120 can be categorized under Memory. It is a 256K bit high-performance, low-power CMOS UV-erasable, one-time programmable memory. It has excellent long-term endurability characteristics, making it particularly suitable for applications requiring high reliability.
NM27C256QE120 Application Field
NM27C256QE120 is typically used in memory-intensive embedded systems such as aerospace, automotive, industrial, medical, and military applications. Its features make it suitable for emulating ROMs in low speed processor-based systems, as well as high speed controllers.
NM27C256QE120 Working Principle
NM27C256QE120 has a non-volatile memory cell consisting of four transistors and two resistors rated at 10 MΩ. It is designed to operate from a single 5V supply and has a -55 °C to +125 °C temperature range. The NM27C256QE120 uses a single-line erase algorithm and can erase a memory block in two stages: bulk erase and fast erase.
The bulk erase feature of NM27C256QE120 erases an entire block of 256K bits so that all cells of the block have the same charge. The fast erase feature selectively erases individual bits within a block. This erase algorithm allows for fast bit-by-bit programming and reduces the programming time.
The NM27C256QE120 also features a self-reference mechanism which automatically reduces the programming time when the number of programmed bits is low. This mechanism helps reduce the overall programming time. The NM27C256QE120 is programmed using a single-pulse programming algorithm with a 12.5 microsecond write cycle time.
The NM27C256QE120 is capable of driving low impedance loads (less than 4 KΩ) and it has low output noise. The NM27C256QE120 also provides an erase protection circuit which prevents inadvertent erase commands from being executed when the device is powered up.
NM27C256QE120 operates at normal frequencies, temperature, and voltage levels. It has a very low power consumption, a fast write cycle time, and an exceptionally long erase life. In addition, it has a wide operating temperature range and can withstand harsh environments.
NM27C256QE120 is a low-power and cost-effective solution for a wide range of embedded applications. Its features make it an ideal choice for the aerospace, automotive, industrial, medical, and military applications that require memory intensive embedded systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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NM27C256QE200 | ON Semicondu... | 0.0 $ | 1000 | IC EPROM 256K PARALLEL 28... |
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NM27C512Q120 | ON Semicondu... | 0.0 $ | 1000 | IC EPROM 512K PARALLEL 28... |
NM27C512Q200 | ON Semicondu... | 0.0 $ | 1000 | IC EPROM 512K PARALLEL 28... |
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