NM27C512N150 Allicdata Electronics
Allicdata Part #:

NM27C512N150-ND

Manufacturer Part#:

NM27C512N150

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EPROM 512K PARALLEL 28DIP
More Detail: EPROM - OTP Memory IC 512Kb (64K x 8) Parallel 15...
DataSheet: NM27C512N150 datasheetNM27C512N150 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Write Cycle Time - Word, Page: --
Access Time: 150ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-DIP
Base Part Number: NM27C512
Description

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The NM27C512N150 is a type of integrated circuit designed to store digital data. It is classified as a memory and is used in a variety of applications ranging from embedded systems, game consoles, consumer electronics, and more. This article will discuss the application field of the NM27C512N150 and its working principle.

The NM27C512N150 is a type of FLASH technology, and is commonly employed in consumer products and embedded systems. This is due to its ability to be reprogrammed without the need to re-assembly. Its affordability and power requirements also make it attractive for consumer products and embedded systems. The most common applications for the NM27C512N150 include industrial controllers, smart cards, audio and video equipment, GPS systems, automotive systems, and consumer electronics.

The working principle of the NM27C512N150 is a combination of NMOS and CMOS transistors. NMOS transistors are used to store data and CMOS transistors are used to read and write data to the memory. The NMOS transistors are configured as a NOR flash, and the CMOS transistors are used as an NAND flash. This allows for higher densities and faster read/write times.

The NM27C512N150 utilizes a three layer architecture. The first layer consists of the physical transistors which store the data. The second layer is the address registers which store the addresses for the transistors. The third layer is the control logic layer which contains the logic for the address registers and controlling the transistors. This architecture allows for high levels of reliability and speed.

The NM27C512N150 is an efficient and reliable memory, making it a suitable solution for embedded systems, consumer electronics and other applications. It is reliable, easy to use and affordable. Its ability to be reprogrammed without the need to re-assembly makes it ideal for embedded systems and consumer electronics.

In conclusion, the NM27C512N150 is a type of FLASH memory used in a variety of applications. Its three layer architecture allows for reliable and fast data storage. Its affordability and power requirements make it attractive for consumer products and embedded systems. It is a reliable, efficient and affordable memory solution.

The specific data is subject to PDF, and the above content is for reference

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