NM27C010Q90 Allicdata Electronics
Allicdata Part #:

NM27C010Q90-ND

Manufacturer Part#:

NM27C010Q90

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EPROM 1M PARALLEL 32CDIP
More Detail: EPROM - UV Memory IC 1Mb (128K x 8) Parallel 90ns...
DataSheet: NM27C010Q90 datasheetNM27C010Q90 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - UV
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: --
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.685", 17.40mm) Window
Supplier Device Package: 32-CDIP
Base Part Number: NM27C010
Description

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The NM27C010Q90 is a high-performance dynamic RAM with a Mode-B capability – an extended cycle time designed to be used in various applications. It requires an external control program and can be used to store data of up to 128K bits (8K by 16 bits). The NM27C010Q90 is a common-input device that can be used in a variety of application fields to store data in different formats and provide fast access time.

The NM27C010Q90 is ideal for applications such as data/instruction memory in micro-controller systems, operator interface detail memory, digital I/O port control, ROM replacement, data acquisition and control program, and real-time clock control applications. Its extended access time allows data to be read from memory more quickly, allowing programs to read data in a single cycle instead of the usual two. This reduces overall memory access time and increases system speed.

Working Principle

The NM27C010Q90 works based on the principle of dynamic RAM, which means that the data stored in it is volatile. That is, when power is removed, the data stored in the memory is lost. As with other dynamic RAMs, data is stored in cells, each consisting of an ETL (emitter-transistor logic) device, a pair of transistors, and a memory transistor. The information is read from or written to the memory by setting the proper conditions in the cells. The cells are organized into columns, which can be accessed in parallel, allowing for fast read and write access.

The Mode-B capability of the NM27C010Q90 allows for a slightly extended access time for the retrieval of stored data. This reduces the overall system access time and allows for faster program execution. In addition, the NM27C010Q90 is pin-compatible with standard DRAMS and is designed to operate with standard TTL logic.

Conclusion

The NM27C010Q90 is a high-performance dynamic RAM with a Mode-B capability – an extended cycle time designed to be used in a variety of applications. It is designed to provide fast access times and is ideal for applications involving data/instruction memory, operation interface detail memory, digital I/O port control, ROM replacement, data acquisition and control program, and real-time clock control applications. The Mode-B capability of the NM27C010Q90 further enhances system speed by reducing the overall system access time.

The specific data is subject to PDF, and the above content is for reference

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