NM27C040V200

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NM27C040V200

NM27C040V200, sometimes referred to as the NM27C0400V200, is a dynamic random-access-memory (DRAM) chip that is primarily used for computer memory applications. The device features a 4.194 megabyte capacity, a maximum random access time of 200 nanoseconds, and an access time of 12 microseconds. It is fabricated using a 0.8 µm CMOS-based process and has an operating temperature range of 0 to 75 degrees Celsius.

Application

The NM27C040V200 is designed for applications where large amounts of data need to be stored and accessed quickly. Examples of these applications include network servers, personal computers, gaming systems, telecom switches, and embedded applications. This chip is able to handle significant amounts of data while maintaining its low power consumption and offering fast random access times.

The NM27C040V200 is also suited for industrial applications. Its higher capacity and speed make it a suitable choice for applications that require large amounts of data to be processed quickly. In addition, its advanced DRAM circuitry ensures that it is able to handle a broad range of operating temperatures with minimal degradation in performance.

Working Principle

The NM27C040V200 is a dynamic random access memory (DRAM) chip, meaning that the device stores its data using a capacitor-based memory cell circuitry. The data is stored in the form of charge, which is delivered to the memory cells via a capacitor. The advantage of this type of memory is that it is non-volatile, meaning that the data in the memory cells will remain intact even when power is lost.

The NM27C040V200 operates using an integrated matrix of 256 rows and 128 columns of memory cells, which are arranged in a 2048x2048 matrix. These memory cells contain either a ‘1’ or a ‘0’, depending on the amount of charge that is stored in the cell. The process of retrieving the data (or “reading”) is done by applying a voltage of appropriate scheme to the appropriate row and column in the matrix.

Write operations (or storing data) involve storing a specific amount of charge in a memory cell. This process of charging the cells is done by first connecting the appropriate row and column of the matrix to the control signal, and then applying the right voltage scheme to the cell. Once the write operation is complete, the memory cell voids the unnecessary charge, thus writing the appropriate data.

Conclusion

The NM27C040V200 is a dynamic random access memory (DRAM) chip that is designed for computer memory applications and is able to store up to 4.194 megabytes of data. It features a fast access time of 12 microseconds, and is fabricated using an advanced 0.8 µm CMOS process. Furthermore, it is able to handle a broad range of operating temperatures with minimal degradation in performance. As such, the NM27C040V200 is an ideal solution for applications where speed and large data storage are of critical importance.

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