Allicdata Part #: | NM27C010QE120-ND |
Manufacturer Part#: |
NM27C010QE120 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC EPROM 1M PARALLEL 32CDIP |
More Detail: | EPROM - UV Memory IC 1Mb (128K x 8) Parallel 120n... |
DataSheet: | NM27C010QE120 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - UV |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 32-CDIP (0.685", 17.40mm) Window |
Supplier Device Package: | 32-CDIP |
Base Part Number: | NM27C010 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NM27C010QE120 is a CMOS-based, high-speed, 1 Megabit (128K x 8 bit) nonvolatile memory device type that is used in many applications. It is one of the few nonvolatile memories that have been designed for a wide range of applications and for environments that require extreme temperature ranges. The NM27C010QE120 has a reliable design and offers a broad range of features.
Applications of the NM27C010QE120 include data storage and memory, embedded control, digital signal processing, and control systems. It is also suitable for applications requiring extended temperature ranges and is suitable for use in many industrial and military applications. The NM27C010QE120 can also be used in automotive and audio systems.
The NM27C010QE120 works by storing data in an array of nonvolatile memory cells. Each memory cell contains two transistors and two capacitors. The transistors operate in a cross-coupled arrangement, where the state of the cell can be set or reset by the application of a voltage or current. The capacitors store data and hold the state of the cell, even when power is removed from the device.
The NM27C010QE120 operates with a voltage range of 3.3V to 5V and can operate at temperature ranges from -40°C to 125°C. This device also has an endurance rating of up to 10,000 program/erase cycles and a data retention of 10 to 15 years. Its advanced digital architecture and design features make it a reliable and versatile nonvolatile memory.
The NM27C010QE120 also has a host of features that increase its functionality, including high speed programming and erasure, low power consumption, direct byte/word access and error correction. Owing to its robust design and its ability to handle extreme temperature ranges, the NM27C010QE120 is ideal for use in any environment that requires reliable non-volatile memory.
The NM27C010QE120 is a reliable and versatile device, making it suitable for a wide range of applications in many different sectors. Its high speed programming, low power consumption and advanced design features make it an ideal choice for data storage and memory, embedded control, digital signal processing, and control system applications. Furthermore, its ability to operate in a wide range of temperatures and its durability make it suited to use in many types of industrial and military applications.
The specific data is subject to PDF, and the above content is for reference
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