NM27C040V120

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EPROM
Technology:	EPROM - OTP
Memory Size:	4Mb (512K x 8)
Write Cycle Time - Word, Page:	--
Access Time:	120ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-LCC (J-Lead)
Supplier Device Package:	32-PLCC (14x11.46)
Base Part Number:	NM27C040

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NM27C040V120 Memory

The NM27C040V120 represents a family of high-speed, low-power non-volatile Ferroelectric Random Access Memory (FRAM). It is a versatile memory device with wide range of functionality and provides a good balance between speed and storage capacity. The NM27C040V120 is a 4Mb FRAM, with a capacity of 1Mbit and a maximum frequency of 25MHz. It is designed to work with a voltage range of 2.7V to 3.3V and a temperature range of -40°C to +85°C.

Application Field

The NM27C040V120 is suitable for a variety of applications, such as automotive, aviation and military markets. It is also used in industrial and consumer electronics, medical systems, telecommunications and many more. It provides a cost effective solution for both high and low density applications.The NM27C040V120 is ideal for data storage and execution needs in small form factor embedded systems. It can be used as on-chip memory, or with external memory. It is also used in systems with a large code requirement and in high performance designs, as it provides a small footprint, a low cost and improved speed.

Working Principle

The NM27C040V120 is based on ferroelectric technology, which uses a polarization of different orientations in the material to store bits of information. The device has three ports for read, write and data. The write port is used to program the memory and the read port is used to retrieve data from the memory. When the read port receives a voltage greater than 1.3V a data read operation is triggered.When a write command is issued, the NM27C040V120 stores the data in memory with a cell size of 32 bits. The write operation requires a voltage greater than 1.3V and a minimum duration of 1ms. All write operations take place in a non-volatile way.The NM27C040V120 FRAM has a wide range of features including a write filter bit, which stores an extra bit of information with each cell write. This filter can help reduce the write endurance of the device to hundreds of thousands of cycles. It also has an onboard error correction code, which is used to detect and correct any data errors before they are written to memory.In addition, the NM27C040V120 has a write-back mode, which allows data to be written in stages rather than all at once. This is useful for large transfers of data such as those used in video and audio recordings. The write back mode is also used to reduce power consumption, as only the cells that need to be rewritten are powered.

Conclusion

The NM27C040V120 is a versatile memory solution which offers a wide range of features and benefits. It is suitable for a variety of applications and can provide a cost effective solution for high and low density applications. It is designed for high speed and low power consumption, making it ideal for embedded systems. The write filter bit, error correction code and write-back mode help to improve the endurance and reliability of the device.

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