Allicdata Part #: | NM27C010T120-ND |
Manufacturer Part#: |
NM27C010T120 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC EPROM 1M PARALLEL 32TSOP |
More Detail: | EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 120... |
DataSheet: | NM27C010T120 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - OTP |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 32-TSOP |
Base Part Number: | NM27C010 |
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The NM27C010T120 is a 128Kbit high-speed CMOS EPROM (Electronic Programmable Read-Only Memory) device. It is capable of offering exceptional performance, with fast access time and low-power consumption. It is built with a split field architecture that enables independent programming of up to 64Kbits. The NM27C010T120 is highly reliable and is ideal for applications that require high-speed access and low-power consumption, such as in process control, data transfer, communications, automotive, and consumer electronics.
This EPROM is also suitable for use in applications that require random access and data storage, as well as for applications that require a large amount of ROM storage. The NM27C010T120 can store up to 128Kbits of information, with an access time as fast as 120ns. It also features an excellent data retention time of up to 10 years, making it an ideal choice for applications that require long-term data storage.
The NM27C010T120 is available in 8-pin and28-pin packages and a wide range of access times and voltage ranges. The 8-pin package is available in 100ns and 120ns access times, while the 28-pin package is available in 60ns, 80ns and 150ns access times. This EPROM also offers extended temperatures, with an operating temperature range of -40C to +85C.
The NM27C010T120 employs a split field architecture that allows it to store 64Kbits of information independently and the remaining 64Kbits combined in the same field. It features an array of 32,768 x 8 bits, which gives it the ability to store 128Kbits of data. The device also features an internal latch for reads, and a fuse for programming.
A major benefit of the NM27C010T120 is its high performance, as it can operate at speeds of up to 120ns. This makes it suitable for applications that require a fast access time. Furthermore, the NM27C010T120 has a low-power consumption of just 75 mA, making it suitable for applications where power efficiency is a priority.
The NM27C010T120 is designed to be used with a power supply of 5V. Additionally, it has a low-voltage detection circuit that can detect 1.2 V and disable the device if the voltage falls below this level. This helps to protect the device from being damaged due to voltages that are too low.
In summary, the NM27C010T120 is an ideal choice for applications that require high performance, fast access time, low-power consumption, and data storage. Its split field architecture enables independent programming of up to 64Kbits, which makes it suitable for storage applications. The device comes in 8-pin and 28-pin packages and offers a wide range of access times and voltage ranges. Furthermore, the NM27C010T120 has an excellent data retention time of up to 10 years and a low-voltage detection circuit that can detect 1.2 V and shut down the device if the voltage falls below this level.
The specific data is subject to PDF, and the above content is for reference
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