NM27C010T90 Allicdata Electronics
Allicdata Part #:

NM27C010T90-ND

Manufacturer Part#:

NM27C010T90

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EPROM 1M PARALLEL 32TSOP
More Detail: EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 90n...
DataSheet: NM27C010T90 datasheetNM27C010T90 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: --
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: NM27C010
Description

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The NM27C010T90 is a Memory semiconductor device. It is a read-only memory which means that only data can be read from the memory device the data cannot be written to the chip. The NM27C010T90 is a common product applied in many electronic modules and appliances.

The NM27C010T90 is divided into two parts: the array and control logic. The array is a single transistor static ram (SRAM) which contains 1024 bytes (or 8192 bits) of memory. It is organized as eight pages of eight data blocks in each page, with 256 bytes per data block. The control logic handles decoding of addresses and commands, read and write operations, and data output and input.

The NM27C010T90 is an excellent device for storing large amounts of data, such as in digital controllers, communication devices, and audio and video players. It is ideal for applications where a large amount of data is required, but the device doesn’t need to be written to frequently.

To read data from the NM27C010T90, an address is given to the device. This address is decoded in the control logic, enabling each bit in the data block to be read. Once the address is given, the control logic responds with data from the SRAM array. To write data to the NM27C010T90, the device needs to be in write mode. The address is then given and the data is written to the array. The write operations occur in two steps, first writing the data to the array and then verifying the data.

In addition to reading and writing data, the NM27C010T90 also has the ability to read or write a single bit of data. This is accomplished by using the chip’s bit-programmable feature. This feature allows a single bit of data to be written without affecting the other bits in the data block.

The NM27C010T90 also has a built-in self-test cycle which is used to verify the integrity of the memory. This self-test cycle is initiated by writing a pre-defined command to the device. During the self-test cycle, the consistency of the data stored in the SRAM array is verified. If any errors are detected during the self-test, the device will return an error code.

The NM27C010T90 is an excellent memory device for static data storage applications. It provides a reliable and versatile way to store large amounts of data in a single device. Its bit-programmable feature allows for single data bit writes, which makes it ideal for applications where data is frequently changed. It also provides a self-test feature which verifies the integrity of the data stored in the device.

The specific data is subject to PDF, and the above content is for reference

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