NM27C010N150 Allicdata Electronics
Allicdata Part #:

NM27C010N150-ND

Manufacturer Part#:

NM27C010N150

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EPROM 1M PARALLEL 32DIP
More Detail: EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 150...
DataSheet: NM27C010N150 datasheetNM27C010N150 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: --
Access Time: 150ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP
Base Part Number: NM27C010
Description

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The NM27C010N150 is a type of non-volatile memory, specifically an electrically erasable programmable read-only memory (EEPROM). It is frequently used in embedded applications, where its non-volatility is desirable. In this article, we will take a look at the application fields and the working principles of the NM27C010N150.

Application Fields

The NM27C010N150 is popularly used in applications where a permanent, reliable memory is required. It is commonly used in peripherals such as keyboard, printer, modems and mouse as well as consumer products like video game consoles and digital cameras. In addition, EEPROMs like the NM27C010N150 are also used in automotive, medical and industrial applications.

The most common applications of the NM27C010N150 are in replacing the ROMs or non-transistor memory used in industrial data processing systems, electronic office equipment such as computers, printers and copiers, and in communication and audio equipment.

Working Principle

The NM27C010N150 EEPROM works on the basis of Fowler-Nordheim tunneling. This phenomenon is known as "hot electron injection"; electrons are injected from the control gate of the transistor into the floating gate of the same transistor. This creates a new junction that acts as a capacitance, changing the characteristics of the transistor.

An electric field of 9V is sent to the EEPROM, causing electrons to tunnel from the control gate to the floating gate. This process erases the EEPROM, resulting in a fresh write cycle. On the other hand, electrons can also be injected from the floating gate to the control gate, allowing writing of new data to the EEPROM.

During a read cycle, the NM27C010N150 EEPROM sends an electric field that passes through the tunnel junction. Special circuitry in the chip then interprets the current to determine whether a high or a low voltage is stored in that particular cell.

Conclusion

The NM27C010N150 is an advanced EEPROM with a number of advantages. In addition to its non-volatility, it also offers faster write speeds, larger capacity and greater reliability than earlier EEPROMs. Its field of applications is broad, ranging from consumer electronics to industrial as well as medical purposes.

The NM27C010N150 works on the basis of Fowler-Nordheim tunneling, wherein electrons are injected from the control gate to the floating gate. While this allows for data writing, electric fields are sent during a read cycle to determine the voltage stored in a cell.

The specific data is subject to PDF, and the above content is for reference

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