Allicdata Part #: | NSS12100XV6T1GOSTR-ND |
Manufacturer Part#: |
NSS12100XV6T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 12V 1A SOT-563 |
More Detail: | Bipolar (BJT) Transistor PNP 12V 1A 500mW Surface... |
DataSheet: | NSS12100XV6T1G Datasheet/PDF |
Quantity: | 11 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 440mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 2V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Base Part Number: | NSS12100 |
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The NSS12100XV6T1G is a Bipolar Junction Transistor (BJT) specifically designed for use in industrial control and communications applications. This article will discuss its application field and working principle.
Application Field
The NSS12100XV6T1G is a bipolar NPN transistor designed to operate in an industrial or commercial environment. This product is rugged, versatile, and has the robustness required to survive conditions in an industrial application. It can provide power up to 500 Watts and can be used in switching circuits, amplifiers, and other applications that require high speed operation.
It is suitable for use in a wide range of industrial control and communication applications. These include current sensing, motor control, liquid level control, heating control, and switching applications. Its high current capacity and low saturation voltage make it ideal for use in power applications.
Working Principle
The NSS12100XV6T1G is a NPN transistor which means it has an N-type (Negative) base and a P-type (Positive) collector. It is a three-terminal device composed of two P-type regions and one N-type region. This device has two main functions: Switching (high-current on/off) and Amplification (high gain).
In switching applications, the base region of the NSS12100XV6T1G acts as a gate that allows current to flow between the emitter and collector. When a small current is applied to the base, it switches on and the current between the emitter and collector grows exponentially. When the current is removed, the transistor switches off and the current is cut off. This switching action is used in power applications and other circuits where current needs to be controlled.
In amplifying applications, the base region is used to control the current flow between the emitter and collector. This allows for a larger current flow than is available from the base itself. This amplification is used in audio and other applications where signal gain is required. The NSS12100XV6T1G is capable of providing up to 30 dB of gain.
The NSS12100XV6T1G provides high speed operation, low saturation voltage, and good temperature stability. It also has a high current capacity which makes it ideal for power applications. This makes it a very versatile and robust device for use in industrial control and communication applications.
Conclusion
The NSS12100XV6T1G is a versatile and robust device which is suitable for use in a wide range of industrial control and communication applications. Its high current capacity and low saturation voltage make it suitable for use in power applications. It is also capable of providing high speed operation, low saturation voltage, and good temperature stability. Its three-terminal configuration allows for both switching and amplifying applications.
The specific data is subject to PDF, and the above content is for reference
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