NSS1C201MZ4T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSS1C201MZ4T1GOSTR-ND |
Manufacturer Part#: |
NSS1C201MZ4T1G |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 2A SOT223-4 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 2A 100MHz 800mW ... |
DataSheet: | NSS1C201MZ4T1G Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.15080 |
2000 +: | $ 0.13750 |
5000 +: | $ 0.12863 |
10000 +: | $ 0.11976 |
25000 +: | $ 0.11828 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 180mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 2V |
Power - Max: | 800mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | NSS1C201 |
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NSS1C201MZ4T1G is a kind of bipolar transistor. It is also known as a bipolar junction transistor(BJT). A BJT is a type of semiconductor made of two types of semiconductor materials (one p-type and one n-type). The two types of semiconductor materials are joined together to form a “junction” between them, which is referred to as a bipolar junction.
The NSS1C201MZ4T1G is a single bipolar transistor that is designed to provide switching functionality. The term “single” is used to describe how the device works, which is to provide current conduction paths in only one direction. A single transistor will typically have three terminals, the Emitter, Collector and Base. It is the Base terminal that allows current to flow through the device, allowing it to be switched on and off.
The NSS1C201MZ4T1G is used in a variety of applications, from simple power switching to more complex analog applications. This device can be used as a switch by controlling the flow of current from the collector to the emitter through the base. For example, the device can be used to switch on or off an LED or other light source. It can also be used for more complex analog switching applications, such as controlling the gain of an amplifier or changing the frequency of an oscillator.
In addition to switching, the NSS1C201MZ4T1G can also be used as an amplifier, with the output current being dependent on the base current. The device acts as a variable current source, with the output current being determined by the base current, as well as the voltage drop across the collector-emitter junction. When the device is used as an amplifier, the base current must be kept much lower than the collector current, in order to minimize any distortion.
The working principle of the NSS1C201MZ4T1G is relatively straightforward. When the base is connected to the power supply, current will flow from the collector to the emitter, allowing the current to pass through the device. When the base voltage is reduced below the emitter voltage, the current will stop flowing, acting like a switch.
The NSS1C201MZ4T1G is a versatile transistor that is capable of providing switching and amplification functionality in a range of applications. The device is designed to provide a low voltage, high current solution and can be used for both simple and complex switching applications. The basic working principle of the device is relatively simple but it offers a great deal of flexibility and performance.
The specific data is subject to PDF, and the above content is for reference
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