NSS12601CF8T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	12V
Vce Saturation (Max) @ Ib, Ic:	120mV @ 400mA, 4A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1A, 2V
Power - Max:	830mW
Frequency - Transition:	140MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	ChipFET™
Base Part Number:	NSS12601

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<h1>Introduction</h1>The NSS12601CF8T1G is an NPN silicon monolithic integrated circuit that is part of the single transistor bipolar (BJT) family. This device is specifically designed for use in switching and audio applications. The NSS12601CF8T1G is capable of driving high speeds, processing loads, and analog signals.<h1>Applications</h1>The NSS12601CF8T1G can be used in a variety of applications. This transistor is widely used in the field of telecom, wherein it can be deployed to drive high-speed switching loads, as well as audio signals.The NSS12601CF8T1G has also been deployed in motor control systems, whereby it can be used to drive and regulate DC motor speeds. Furthermore, this device can be used in the production of medical electronics, such as robotic medical equipment, breathing support systems, and medical monitors.The NSS12601CF8T1G can also be used in the production of test and measurement instruments. It is an invaluable asset in the development of complex wireless systems. Finally, this device is ideal for any application requiring fast and reliable switching speeds.<h1>Features</h1>The NSS12601CF8T1G has the following features: • It supports a maximum collector current of up to 1A. • It has a maximum collector-emitter voltage of up to 60V. • It has a maximum collector-base voltage of up to 60V. • It has a maximum power dissipation of up to 2.5W. • It operates from a temperature range of -55°C to +150°C. • It is available in TO-220, TO-126, and TO-92 packages.<h1>Working Principle</h1>The NSS12601CF8T1G works by regulating bipolar flow. Specifically, it is an NPN device that works in the same fashion as a current regulator. In operation, the device is turned ON when a bias voltage is applied to its base terminal. The voltage passing through the emitter-base junction results in a current gain. The current passing through the collector-emitter region is equal to the collector-emitter voltage divided by the collector load resistance. The NSS12601CF8T1G works by controlling the flow of electrons from the emitter to the collector. A small current at the base results in a larger current at the collector, meaning that when a small current is applied to the base, it will result in a considerable amount of current flowing from the collector. This effect is known as current amplification. <h1>Conclusion</h1>The NSS12601CF8T1G is a single bipolar transistor that is widely used in applications such as high-speed switching, motor control, medical electronics, test and measurement instruments, and wireless systems. This device is capable of supporting a maximum collector current of up to 1A and a maximum collector-emitter voltage of up to 60V. The NSS12601CF8T1G works by regulating bipolar flow, wherein it is turned ON when a bias voltage is applied to its base terminal. This device is ideal for any application requiring fast and reliable switching speeds.

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