NSS1C200MZ4T1G Discrete Semiconductor Products

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The NSS1C200MZ4T1G is a transistor categorized under the Bipolar Junction Transistor (BJT) Single group. It is used in a wide range of applications and is available in a dual-in-line plastic package.

The NSS1C200MZ4T1G is rated at 600V DC, 800mA peak and will switch up to 200MHz. It is commonly used for signal amplification, switching, and for providing current gain in amplifiers. It can be used in a variety of circuits including low-noise amplifiers, PLLs and linear amplifiers.

A BJT transistor has three main terminals: the Collector, Base, and Emitter. The NSS1C200MZ4T1G operates based on the flow of electrons from the emitter to the collector. The current gain of the transistor is determined by the ratio of the collector current to the emitter current, or hfe. It has an hfe rating of 200.

When current is applied to the base of the transistor, it flows from the emitter to the collector. This causes the transistor to act like an switch, allowing current to flow through it. The base current can be adjusted to control the amount of current flowing through the transistor. This means it can be used as an amplifier in its basic switch form, and can be used for more complex switching algorithms.

The NSS1C200MZ4T1G is also equipped with an on-chip ESD protection to protect itself from electrostatic discharge damage. This feature is especially important in mobile, consumer, and automotive applications.

The NSS1C200MZ4T1G is a very versatile and powerful transistor and can be used in a variety of applications. It is especially useful for low-noise, high-frequency applications such as RF receivers, amplifiers and switches. It is also used in a variety of other applications such as audio amplifiers and power transistors. Its high current gain and ESD protection make it a popular choice in many different industries.

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