Allicdata Part #: | NSS12501UW3T2GOSTR-ND |
Manufacturer Part#: |
NSS12501UW3T2G |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 12V 5A 3-WDFN |
More Detail: | Bipolar (BJT) Transistor NPN 12V 5A 150MHz 875mW S... |
DataSheet: | NSS12501UW3T2G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.21102 |
6000 +: | $ 0.19647 |
15000 +: | $ 0.19404 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 120mV @ 400mA, 4A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2A, 2V |
Power - Max: | 875mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-WDFN Exposed Pad |
Supplier Device Package: | 3-WDFN (2x2) |
Base Part Number: | NSS12501 |
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The NSS12501UW3T2G is a part of NXP Semiconductors\' wide range of bipolar transistors. The NSS12501UW3T2G is a single transistor chip that was designed by NXP Semiconductor to be used in a wide variety of applications. This device is capable of delivering a high current gain with a low voltage drop, which makes it ideal for use in switching and power supply design.
The NSS12501UW3T2G is a NPN Silicon transistor, featuring high current gain and low saturation voltage. It operates at a collector current of 25mA, collector voltage of 250V, base to emitter voltage of three volts, and collector to emitter voltage of 25V. The device has high current gain of 92 and a low saturation voltage of 0.2V. It also has a relatively low on-state resistance of 1.2 ohms. The transistor also features a low input capacitance of only 8pF, which means it can switch faster than many other transistors.
The main use of the NSS12501UW3T2G transistor is switching applications. It is suitable for use in high-speed, low-current circuits such as logic level switching circuits and DC-DC converters. It can also be used in voltage regulator circuits and other high-current circuits requiring low on-state resistance. The device is also suitable for use in low-voltage and low-power applications where low input capacitance is desirable.
The working principle of the NSS12501UW3T2G transistor is based on the movement of electrons between its two layers, the P-type and N-type Silicon layers. When a base current is applied to the transistor, a few electrons from the N-type layer flow into the P-type layer. This causes an imbalance of electrons and the holes in the P-type layer move toward the N-type layer. These holes provide the collector current which flows from the collector to the emitter.
The NSS12501UW3T2G is a single bipolar transistor with a wide range of uses. It offers high current gain and low saturation voltage, making it suitable for use in switching applications and other high-current circuits requiring low on-state resistance. It also has a low input capacitance, making it suitable for high-speed, low-current circuits. The device is reliable and dependable, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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