NSS1C201LT1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 500mA, 2V
Power - Max:	490mW
Frequency - Transition:	110MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	NSS1C201

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Bipolar junction transistors (BJTs) form the basis of many electronic systems and devices, with the single type being one of the most common forms. The NSS1C201LT1G is a single type of BJT, which finds applications in a wide range of industries and electronics. This article will examine the working principles, application fields and advantages of this BJT and provide an overview of its capabilities.The NSS1C201LT1G is a medium power, NPN silicon transistor with a high current gain of 800-1000. It is available in a standard TO-92 package, which makes it ideal for various applications. The device is a low voltage, low current BJT, with a maximum Collector-Base voltage rating of 75V and a maximum Collector-Emitter current rating of 200mA. This makes it particularly well-suited to low-power devices and applications.The working principle of the NSS1C201LT1G is based on the concept of bipolar junction transistors. Bipolar junction transistors are three-terminal devices that utilize two p-n junctions. This allows them to control the flow of current between its base and collector leads, depending upon the current flowing through its emitter lead. When the emitter is supplied with a forward bias current, a current is allowed to travel from the Collector-Base junction which consequently amplifies its input signal. This allows the NSS1C201LT1G to be used as a switch, amplifier or as a voltage regulator.Due to its various capabilities, the NSS1C201LT1G has a wide range of applications. It is often used in consumer electronic devices and power supplies, as it is suitable for low voltage, low current circuits where the high current gain of 800-1000 can be beneficial. Additionally, the BJT can also be used for power switching and amplification, as the input resistance of the device makes it well-suited for low-power circuits.The NSS1C201LT1G also has a number of advantages over other BJT types. Firstly, the BJT has a high current gain which makes it suitable for low-power circuits. Additionally, the Voltage Ratings of the device are low, which reduces the amount of power required to operate the BJT. Additionally, the device is capable of operating at high temperatures and has low switching times which makes it suitable for use in high frequency applications.In conclusion, the NSS1C201LT1G is a medium power, NPN silicon transistor that has a wide range of applications. Its high current gain and low voltage ratings make it suitable for low-power circuits, whilst its high temperature operation and low switching times make it suitable for high frequency applications. Lastly, the device is available in a standard TO-92 package, which makes it well-suited to a variety of applications.

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