NSS12201LT1G Discrete Semiconductor Products |
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Allicdata Part #: | NSS12201LT1GOSTR-ND |
Manufacturer Part#: |
NSS12201LT1G |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 12V 2A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 12V 2A 150MHz 460mW S... |
DataSheet: | NSS12201LT1G Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.07979 |
6000 +: | $ 0.07495 |
15000 +: | $ 0.07011 |
30000 +: | $ 0.06447 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 90mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 2V |
Power - Max: | 460mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | NSS12201 |
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NSS12201LT1G transistors are single-bipolar junction transistors (BJT) designed and produced by ON Semiconductor. They are part of a family of products called N-channel enhancement-mode vertical MOSFETs. In terms of their electrical characteristics, NSS12201LT1G transistors are optimized for low-voltage and low-current applications. They are ideal for use in applications such as low-power automotive and communication systems.
NSS12201LT1G transistors are constructed from a silicon substrate, an n-type source, and a gate layer consisting of an exceptionally thin body. Each transistor has two terminals, the high voltage terminal and the low voltage or ground terminal. The gate layer can be considered as two p-type and n-type junctions. A bias current flows between the two terminals, and this current is modulated by the voltage applied to the gate layer. In other words, when the gate voltage changes, the bias current also changes, providing the means for controlling the transistor\'s current gain.
NSS12201LT1G transistors are designed to operate as analog switches. When a positive gate voltage is applied, the transistor will turn on, allowing current to flow from the source to the gate. As the gate voltage decreases, the transistor\'s conduction decreases, which decreases the current flow. When the gate voltage reaches a certain threshold, the transistor will turn off, preventing any current flow. This makes the device useful for switching applications, such as in audio amplifiers, where the transistor can be used to switch between different gain states.
NSS12201LT1G transistors are also used for many other purposes. They are used for motor control, automating fans and pumps, providing protection against voltage spikes and overcurrent protection, interfacing with digital circuits, and many other applications. As such, they are a popular choice for both industrial and consumer applications.
The NSS12201LT1G transistor is an excellent choice for low-voltage and low-current applications. Their robust construction and optimized design make them well-suited for a wide variety of switching and automation applications. Their low power consumption and efficient thermal management make them environmentally friendly as well.
In conclusion, the NSS12201LT1G transistor is one of the most popular single-bipolar junction transistors available today. Its excellent electrical characteristics make it the ideal choice for a wide range of low-voltage and low-current applications. And its easy to use design and robust construction make it a reliable choice for industrial and consumer applications alike.
The specific data is subject to PDF, and the above content is for reference
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