Allicdata Part #: | NSS12600CF8T1G-ND |
Manufacturer Part#: |
NSS12600CF8T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 12V 5A CHIPFET |
More Detail: | Bipolar (BJT) Transistor PNP 12V 5A 100MHz 830mW S... |
DataSheet: | NSS12600CF8T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 170mV @ 400mA, 4A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 1A, 2V |
Power - Max: | 830mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | ChipFET™ |
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The NSS12600CF8T1G is a single NPN bipolar junction transistor (BJT), typically used for power amplification, switch mode, and other applications. It is designed for low voltage, low current, and high-power applications In the NSS12600CF8T1G, the collector, base and emitter are three separated terminals options for a connection and control of current. The NSS12600CF8T1G is constructed using an combination of PN junction, a semiconductor material, a substrate, base, emitter and collector. It is known for its ability to provide excellent power and frequency characteristics, with high gain and fast switching speed.
In the NSS12600CF8T1G, the base-emitter junction can control the current amplification. When a current is entering the base, a small current flows through the emitter. The small current is amplified by the device and the increased current flow pushes the electrons through the collector, which is connected to a load. Then, the NSS12600CF8T1G can provide a closed loop feedback that can be used to regulate the current that passes from the base to the collector. Therefore, the NSS12600CF8T1G can be used to control both on and off states with the application of a voltage.
The NSS12600CF8T1G is typically used for power amplifications, switch mode, and other applications. In power amplifications, the NSS12600CF8T1G works by allowing the voltage to signal to be pushed through the transistor, which amplifies the current. These transistor configurations are typically used in audio amplifiers. In switch mode, the NSS12600CF8T1G is used as a switch to control the voltage signal and to regulate the current. It is typically used as a thermistor in temperature controllers. The NSS12600CF8T1G can also be used in switching logic gates, in which two 3-way gates can be controlled with a single NSS12600CF8T1G.
In addition to power amplification and switch mode, the NSS12600CF8T1G can be used in various applications such as motor control circuit and variable geometry control. In motor control circuit, the NSS12600CF8T1G can be used to regulate the current coming from the voltage and ensure a smooth operation of the motors. In variable geometry control, the NSS12600CF8T1G is used to adjust the amount of energy that is transferred from the collector to the emitter to change the current loop.
In conclusion, the NSS12600CF8T1G is a single NPN BJT used for power amplification, switch mode, and other applications. It is designed for low voltage, low current, and high-power applications. The base-emitter junction in the NSS12600CF8T1G is used to control the current amplification, allowing for a closed loop feedback that can be used to regulate the current that passes from the base to the collector. The NSS12600CF8T1G can also be used in motor control circuits and variable geometry control. In short, the NSS12600CF8T1G is a high-power single NPN BJT with versatile applications.
The specific data is subject to PDF, and the above content is for reference
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