NSS1C200MZ4T3G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	220mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 500mA, 2V
Power - Max:	800mW
Frequency - Transition:	120MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	NSS1C200

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Introduction

The NSS1C200MZ4T3G is a single bipolar junction transistor (BJT) designed for general-purpose use. It is a NPN device with a voltage rating of 200 volts maximum, a continuous current rating of 4 A, and a maximum power dissipation rating of 3W. This device is manufactured and marketed by ON Semiconductor, which is a leading global supplier of components and solutions to the electronics industry.

Application Field

The NSS1C200MZ4T3G can be used in a variety of applications, such as amplifiers, power switching circuits, voltage regulators, and other analog or digital circuits. It is commonly used in general-purpose audio amplifiers and power converters. This device is suitable for automotive and consumer electronics applications where high power efficiency is of primary importance. Its wide voltage range also makes it useful as a choice for applications such as AC/DC interfaces and rectifying circuits.

Working Principle

The NSS1C200MZ4T3G is a NPN BJT with a 200 V rating, 4 A current rating and 3 W maximum power dissipation rating. The high voltage and power ratings of the device make it ideal for use in both high-voltage and high-power applications. The transistor acts as a current amplifier, with the base terminal controlling the current flow through the collector/emitter path. When small current is applied to the base, it generates a much larger current through the collector/emitter path, due to the current gain of the device.The NSS1C200MZ4T3G has an on-resistance rating of 5 ohms and an on-time rating of 2.7 μs, making it suitable for various switching and circuit protection applications. Additionally, the device features damper diodes, which provide protection against transient voltage spikes. This device is also equipped with thermal-shutdown protection, which senses excessive heat and shuts down power to the device to prevent damage. This protection feature is especially advantageous for use in high-reliability automotive and consumer electronics applications.

Conclusion

The NSS1C200MZ4T3G is a single bipolar junction transistor (BJT) designed with a 200 V rating and 3 W maximum power dissipation rating. It can be used in various applications, such as amplifiers, power switching circuits, voltage regulators, and other analog or digital circuits. This device features damper diodes, an on-resistance rating of 5 ohms, an on-time rating of 2.7 μs, and thermal-shutdown protection. The NSS1C200MZ4T3G is a great choice for power efficiency-critical applications, where its wide voltage range and relatively low power consumption make it a viable solution.

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