Allicdata Part #: | NSVBC848CDW1T1G-ND |
Manufacturer Part#: |
NSVBC848CDW1T1G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN 30V 0.1A SC88 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 10... |
DataSheet: | NSVBC848CDW1T1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.04585 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 380mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
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This article will discuss the application field and working principle of the NSVBC848CDW1T1G, which falls under Transistors - Bipolar (BJT) - Arrays. The NSVBC848CDW1T1G is a Quad Common Emitter Transistor Array. It is an industry-standard component used in a wide variety of electronic applications, from simple logic devices to complex radio frequency (RF) circuits.
The core component of the NSVBC848CDW1T1G is a quad common emitter transistor array. This array is comprised of four interconnected bipolar junction transistors (BJT). Each transistor is composed of a three-terminal arrangement of the base, collector, and emitter. In a common emitter arrangement, the voltage potential at the collector is a function of the base-emitter voltage. When a voltage is applied to the base, it causes a current flow from the collector to the emitter, and the voltage potential at the collector goes up.
Since the NSVBC848CDW1T1G has four transistors, it is often used to build integrated circuits that consist of a number of repeating logic gates. These logic gates are used to perform basic logical operations, such as AND, OR, XOR, and NOT. A number of basic integrated circuit functions, such as multiplexers, decoders, and shift registers, can be constructed using a topology based on the NSVBC848CDW1T1G.
The NSVBC848CDW1T1G is also used in RF circuits. RF circuits use the transistor array to amplify radio waves over a wide range of frequencies. The NSVBC848CDW1T1G is optimized for these applications, providing a low noise figure, wide bandwidth and high gain.
In addition to its applications in digital and RF circuits, the NSVBC848CDW1T1G can be used in analog circuit designs. Since bipolar junction transistors are highly linear devices, analog circuits can be built to take advantage of their properties. For example, the NSVBC848CDW1T1G can be used to build amplifiers, filters, oscillators, and other types of analog circuits.
The NSVBC848CDW1T1G has a number of useful features. It has excellent power dissipation, low distortion, and an ability to operate at high temperatures. It is also a cost-effective solution, due to its integration of multiple transistors into a single package.
In summary, the NSVBC848CDW1T1G is a useful and versatile quad common emitter transistor array. It is used to build a wide variety of circuits, including digital logic and RF circuits, as well as analog circuits. It has excellent power dissipation, low distortion, and a wide range of operating temperatures. Its integration of multiple transistors into a single package makes it an economical solution for many electronic designs.
The specific data is subject to PDF, and the above content is for reference
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