NSVBCW68GLT1G Allicdata Electronics

NSVBCW68GLT1G Discrete Semiconductor Products

Allicdata Part #:

NSVBCW68GLT1GOSTR-ND

Manufacturer Part#:

NSVBCW68GLT1G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP BIPOLAR 45V SOT23-3
More Detail: Bipolar (BJT) Transistor PNP 45V 800mA 100MHz 225m...
DataSheet: NSVBCW68GLT1G datasheetNSVBCW68GLT1G Datasheet/PDF
Quantity: 6000
3000 +: $ 0.05782
6000 +: $ 0.05203
15000 +: $ 0.04625
30000 +: $ 0.04336
75000 +: $ 0.03854
Stock 6000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NSVBCW68GLT1G is a type of Transistors - Bipolar (BJT) - Single component. It is also sometimes referred to as a PNP transistor. This component has a variety of applications and features a balanced performance while in use.

The NSVBCW68GLT1G is widely employed in user device manufacture, manufacturing of electrical equipment, and audio systems. Also, it is regularly used when constructing mobile terminals and wireless communication products.

This component offers a wide range of benefits to manufacturers. It is capable of withstanding an operating temperature from -55°C to +150°C. It also supports a wide range of current levels and can be operated at currents up to 3A. This makes it ideal for use in many different applications.

Furthermore, the NSVBCW68GLT1G has an impressive transit frequency of 150 MHz and frequency range up to 900 MHz. This means that it can be used in high-frequency devices. Additionally, it can be used in both low and high noise applications.

The NSVBCW68GLT1G is also capable of handling high voltages, up to 60V. This makes it suitable for applications such as power supplies and electronic control systems. Its power dissipation range is up to 2 Watts, making it ideal for a variety of uses.

The working principle of a PNP transistor is slightly different than that of a NPN transistor. PNP transistors allow current to flow from the collector to the emitter when there is a positive voltage difference between the base and the emitter. Conversely, NPN transistors allow current to flow from the collector to the emitter when there is a negative voltage difference between the base and the emitter.

In addition, the NSVBCW68GLT1G is improved optimized power integrated circuit in the market. Its built-in emitter current monitoring circuit which allows the high current drive capability and makes the transistor easy to control. It also feature a low noise figure, reliable long-term operation, fast processing speed and low power consumption.

The NSVBCW68GLT1G is a highly useful component, offering a wide range of benefits for users and manufacturers. Its balanced performance and reliable operation make it an ideal choice for a number of applications. The component’s impressive transit frequency, wide operating temperature range and high voltage handling capabilities make it well suited for power supplies and other electronics control systems. Additionally, the component’s low noise figure, fast processing speed and low power consumption are beneficial for users and manufacturers alike. All these features make the NSVBCW68GLT1G a reliable and efficient component.

The specific data is subject to PDF, and the above content is for reference

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