| Allicdata Part #: | NSVBC857BTT1G-ND |
| Manufacturer Part#: |
NSVBC857BTT1G |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 45V 0.1A SC75 |
| More Detail: | Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 200m... |
| DataSheet: |  NSVBC857BTT1G Datasheet/PDF |
| Quantity: | 1000 |
| 6000 +: | $ 0.03929 |
Specifications
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 45V |
| Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max): | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
| Power - Max: | 200mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | SC-75, SOT-416 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
Description
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The NSVBC857BTT1G is a single bipolar transistor (BJT) used in many common applications. This versatile semiconductor device has a variety of uses and can be used in both digital and linear circuit applications. It can also be used as an amplifier, switch, or current regulator. Understanding how the NSVBC857BTT1G works and what its key features are can help you to make an informed decision when selecting the right semiconductor device for your particular application.The NSVBC857BTT1G is a three-terminal NPN silicon transistor used for general-purpose switching and amplifier applications. It features a collector current rating of 600mA, a power dissipation rating of 625mW, and a collector/emitter voltage rating of 30V. This device has a high gain and can be used for switching and amplification for a wide range of applications. It is also useful for providing isolation between the source and load.The working principle of the NSVBC857BTT1G is based on the operation of a BJT transistor. The collector-emitter voltage is determined by the current flowing through the base-emitter junction. In an NPN transistor, the base-emitter current is controlled by the voltage applied to the base to between the collector and emitter. When the base voltage is increased, more charge carriers flow through the base-emitter junction and the base current increases, which causes a corresponding increase in the collector current. This in turn increases the voltage applied to the collector relative to that applied to the emitter.The NSVBC857BTT1G is widely used in electronics in many different types of applications. It can be used as an amplifier in audio systems, a switch in power supplies, and a current regulator in motor control systems. It can also be used for switching in digital applications and for amplifying low-level signals. The transistor can also be used for providing isolation between an application’s source and load, effectively preventing noise and electromagnetic interference from disturbing the system.Overall, the NSVBC857BTT1G is an exceptionally versatile single bipolar transistor that can be used for a wide variety of applications. Its high gain and current rating allow it to be used in both digital and analog applications, including switching, amplification, and providing isolation between the source and load. Understanding the working principle of this device can be vital for selecting the right semiconductor device for any application.
The specific data is subject to PDF, and the above content is for reference
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