NSVBC124EDXV6T1G Allicdata Electronics
Allicdata Part #:

NSVBC124EDXV6T1G-ND

Manufacturer Part#:

NSVBC124EDXV6T1G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: NSVBC124EDXV6T1G datasheetNSVBC124EDXV6T1G Datasheet/PDF
Quantity: 1000
4000 +: $ 0.07204
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Description

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The NSVBC124EDXV6T1G is an array of transistors with pre-biased concepts. It is a bipolar junction transistor, or BJT that is well suited for use in applications such as automotive and telecommunications components, as well as various industrial applications. This type of transistor is commonly used in switching applications, as well as voltage regulation, because of its ability to handle higher voltages and currents with fewer delays than other types of transistors.

The NSVBC124EDXV6T1G is a type of pre-biased array of transistors, in which the base-emitter junction of each transistor is pre-biased. This means that the base-emitter voltage of each transistor is preset, making the transistor ready for use. These pre-biased array transistors make switching from one load to another easier, as each transistor can be used independently, or in parallel. In addition, the pre-biased transistors are capable of handling the higher currents and voltages that would otherwise be difficult, or impossible, to manage with individual transistors. This makes them ideal for use in industrial applications, such as motor control, or in automotive applications, such as power steering and transmission control.

More specifically, the NSVBC124EDXV6T1G consists of a dual array of 12, 4-pole transistors with two emitter connections, one collector connection, and two base connections. The package size is 6.8 x 4.6 mm and is suitable for surface mount applications and features both vertical and horizontal orientations. The collector current is rated at up to 50A and the collector-emitter voltage is rated at up to 1000V, making it particularly well-suited for high-power applications. Additionally, it offers low-noise operation, high-temperature stability, low power consumption, and rapid switching speeds.

The working principle of the NSVBC124EDXV6T1G is simple. When a small current is passed through the base-emitter junction of the transistor, it causes a larger current to be conducted between the collector and emitter connections. This amplified current allows the transistor to be used in many applications, where it can switch between two loads, thus providing a higher current or voltage than could be achieved with an individual transistor. In addition, the collector-emitter voltage of the NSVBC124EDXV6T1G is preset, meaning that it should be used in applications with a stable voltage, or where the load can be adjusted accordingly.

Overall, the NSVBC124EDXV6T1G is an incredibly versatile and powerful pre-biased array of transistors, providing reliable high-power performance for a range of industrial and automotive applications. Its pre-biased design allows for rapid switching, low-noise and low-power consumption, and high-temperature stability, making it a smart choice for any type of application.

The specific data is subject to PDF, and the above content is for reference

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