NSVBC818-40LT1G Allicdata Electronics
Allicdata Part #:

NSVBC818-40LT1G-ND

Manufacturer Part#:

NSVBC818-40LT1G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 25V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor NPN 25V 500mA 100MHz 225m...
DataSheet: NSVBC818-40LT1G datasheetNSVBC818-40LT1G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.03638
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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  • NSVBC818-40LT1G application field and working principle

The NSVBC818-40LT1G is a single-transistor bipolar junction transistor (BJT) designed for low power applications as a switch or amplifier. It is a N-Channel Vertical Bipolar Transistor (VCB) with a maximum collector current rating of up to 100mA and can operate up to a maximum collector-emitter voltage of 12V.

The NSVBC818-40LT1G has a specific on-state resistance that is dependent on the base current and collector current. With the proper biasing, it can be used in a variety of applications including amplifiers, switches, voltage regulators, and current regulators.

The working principle behind the NSVBC818-40LT1G is simple. It is a three-terminal, ‘N’-channel transistor comprised of two back-to-back PN junctions (base and emitter). The two PN junctions form two ‘N’-type layers, one of which is the emitter and is connected to the power supply through the collector. When the base voltage is raised, a small amount of current is drawn from the base and injected into the collector-emitter region and produces a larger current in the collector circuit. The collector current will be proportional to the base current.

The NSVBC818-40LT1G transistor is capable of low-power amplification and switching applications in consumer and automotive electronics, such as light dimmers, motor controls, and audio amplifiers. In addition to its usefulness for low-power applications, the NSVBC818-40LT1G can be used as an oscillatory amplifier, where feedback is used to control the circuit’s frequency of oscillation. The NSVBC818-40LT1G transistor is also well suited for switching applications, such as the switch portion of an LED driver.

Due to its low power consumption and low resistance, the VCEO of the NSVBC818-40LT1G is lower than the VBE of other comparable transistors. This allows the transistor to switch faster and consume less power, while still producing high level performance in switching applications. The higher switching speeds of the transistor can be used to reduce or even eliminate the need for speed-reducing capacitors or fly-back diodes in certain switching circuits.

The NSVBC818-40LT1G is one of a large family of transistors that can be used in different types of applications. With a wide range of available turn-on and turn-off frequencies, this transistor is well-suited for small signal applications, general purpose switching and amplification applications, as well as high speed switching applications. The transistor is also well-suited for high frequency applications, such as ultra-sonic devices, non-volatile memory, and transmitters. The NSVBC818-40LT1G is also well-suited for low frequency applications, including logic and Power Management.

The NSVBC818-40LT1G provides a simple way to implement a wide range of low-power applications in electronics. Its low resistance and high switching speeds make it especially well-suited for switching and amplification applications requiring low power. Its wide range of frequencies make it suitable for applications that require high-speed or low-frequency performance.

The specific data is subject to PDF, and the above content is for reference

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