| Allicdata Part #: | NSVB144EPDXV6T1G-ND |
| Manufacturer Part#: |
NSVB144EPDXV6T1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS NPN/PNP SOT563 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
| DataSheet: |  NSVB144EPDXV6T1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 47 kOhms |
| Resistor - Emitter Base (R2): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | -- |
| Power - Max: | 500mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-563, SOT-666 |
| Supplier Device Package: | SOT-563 |
Description
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The NSVB144EPDXV6T1G is a pre-biased array of silicon NPN BJT (Bipolar junction transistors), designed to deliver multiple, higher current, DC signals, in relatively low-power applications. With its low-power capability and low package size, the NSVB144EPDXV6T1G is an ideal solution to applications requiring multiple AC or DC signals, such as lighting automation, motor control, or multiple power channel switching. Both single and dual configurations are available, offering both high and low voltage switching with adjustable circuit current levels.The NSVB144EPDXV6T1G offers a number of advantages that make it an ideal solution for applications requiring higher DC current levels in a small package size. Its low voltage rating makes it ideal for automotive and general medical applications, while its increased current handling provides superior performance when higher power levels are needed. The array can also be provided in a single package, meaning the user can assemble entire systems using this array without the need of additional components.The NSVB144EPDXV6T1G works by forming a closed loop of current flow between the base and collector electrodes. When a voltage is applied to the base, the current increases and voltage drops across the base-collector junction, allowing collector current to flow through the device. This loop of current flow allows for switching of multiple signals or channels, providing higher current levels consistent with the base voltage applied. The array also offers adjustable circuit current levels via manual adjustments, allowing the design to be optimized for different application requirements.Overall, the NSVB144EPDXV6T1G is an ideal device for low-power applications or for those requiring higher current levels with multiple switching channels. The adjustable circuit current levels provide excellent flexibility and optimization to the design and allows for a wide range of applications. This array of NPN silicon BJT transistors is one of the most cost-effective solutions available in the market today, and can reliably deliver multiple DC signals in low-power applications.
The specific data is subject to PDF, and the above content is for reference
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