Allicdata Part #: | NSVBC114YDXV6T1G-ND |
Manufacturer Part#: |
NSVBC114YDXV6T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.5W SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | NSVBC114YDXV6T1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 500mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
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The NSVBC114YDXV6T1G is a type of transistor array which belongs to the category of pre-biased bipolar junction transistors (BJT). It is primarily used in signal processing applications and its construction consists of four independent NPN transistors connected together in a single package. The use of the NSVBC114YDXV6T1G in signal processing applications enables the device to provide improved noise immunity, power efficiency and signal linearity compared to other types of discrete transistors.
The main purpose of the NSVBC114YDXV6T1G is to provide higher levels of electrical performance in signal processing applications. The device consists of two main components, the main body, which contains four NPN transistors, and the base, which is already pre-biased. This pre-bias is necessary for the proper operation of the device, and it helps ensure that the device performs optimally in the application for which it is intended.
The NSVBC114YDXV6T1G works by combining the current gain of the four NPN transistors into a single current-controlled current source. This is achieved by establishing a connection between the base of each transistor in the array and the collector electrode of the previous transistor. This connection effectively creates a path through which the current flow can be controlled. Additionally, due to the pre-bias, the device can also generate additional gain over and above what the individual transistors in the array are capable of providing.
In signal processing applications, the NSVBC114YDXV6T1G provides improved performance in terms of linearity, noise immunity, and power efficiency. The device is ideal for use in applications that require higher levels of signal linearity, such as audio and video signal processing systems. Additionally, due to its low operating current, the NSVBC114YDXV6T1G can be used in applications where power efficiency is of paramount importance. The device also provides extra protection from unwanted noise, which can improve performance in applications that require high precision signal processing.
The NSVBC114YDXV6T1G is a versatile device and is commonly used in applications such as audio, video, communication, industrial, and defense industries. Its reliable performance and low operating current make it an ideal choice for signal processing applications. Additionally, its unique construction allows it to provide higher levels of performance than other devices, making it an ideal choice for applications where performance is of primary concern.
The specific data is subject to PDF, and the above content is for reference
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