Allicdata Part #: | NSVBAS16WT3G-ND |
Manufacturer Part#: |
NSVBAS16WT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 100V 200MA SC70 |
More Detail: | Diode Standard 100V 200mA (DC) Surface Mount SC-70... |
DataSheet: | NSVBAS16WT3G Datasheet/PDF |
Quantity: | 1000 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 6ns |
Current - Reverse Leakage @ Vr: | 1µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
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The NSVBAS16WT3G diode, also known as a single Schottky diode, is a high-performance diode used in various applications. It is designed to replace the traditional Schottky diodes in applications that require high current. The NSVBAS16WT3G has a block mold package and is available in a variety of colors, including white and green.
The NSVBAS16WT3G is a fast-acting, low-dropout, voltage-regulated Schottky diode. It features a low forward voltage of 0.2 volts and a reverse leakage current of 10 microAmps. It is rated for a peak reverse voltage of 20V and has a continuous forward current rating of 10A. The diode is optimized for operation at low temperature and high forward current conditions, making it ideal for use in a variety of DC-DC converter applications.
The NSVBAS16WT3G is suitable for use in a wide variety of applications, including automotive electronics, power supplies, and industrial electronic applications. In automotive applications, the diode is used to regulate the voltage of the DC-DC converter. Power supplies may use the diode to regulate the output voltage and to protect important components from reverse voltage spikes. The diode is also commonly used in industrial electronics where high current needs to be regulated.
The working principle of the NSVBAS16WT3G is based on the p-n junction diode. When a forward voltage is applied across the diode, the p-type region becomes positively charged relative to the n-type region and current flows freely through the junction. When the voltage is reversed, it limits the current and the diode acts as a rectifier. The diode has a low-voltage drop and will not cause excessive heat in the circuit.
The NSVBAS16WT3G diode is a versatile, high-performance diode designed for a variety of applications. It is a single Schottky diode with a low forward voltage and reverse leakage current. The diode is optimized for operation at low temperature and high forward current conditions and is suitable for automotive electronics, power supplies, and industrial electronic applications. The diode is based on the p-n junction principle and acts as a rectifier when the voltage is reversed. It has a low-voltage drop and will not cause excessive heat in the circuit.
The specific data is subject to PDF, and the above content is for reference
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