NSVBA114EDXV6T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	500mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563-6

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The NSVBA114EDXV6T1G is a pre-biased, bipolar junction transistor array. This advanced component provides excellent circuit protection and offers signal connection to a variety of devices. It is used in a variety of applications, including low-current switches, line protection, and signal conditioning. This article will discuss the application field and working principle of the NSVBA114EDXV6T1G.The NSVBA114EDXV6T1G is a pre-biased, bipolar junction transistor array. This device incorporates two complimentary bipolar junction transistors (BJT) in a single package, with each BJT connected to one another emitter and collector. This allows the device to be pre-biased during manufacturing, making it suitable for applications where a bias voltage is not readily available. The NSVBA114EDXV6T1G is an ideal choice for use in low-current, high-frequency, audio, and power circuits.In terms of its application field, the NSVBA114EDXV6T1G is used in low-current switches, line protection, and signal conditioning circuits. Due to its pre-biased nature and the inherent advantage of BJTs, it is also an ideal choice for use in circuits that require maximum efficiency, such as AC/DC converters and power supplies.The NSVBA114EDXV6T1G operates in two main stages: the base stage and the emitter-collector stage. During the base stage, voltage is applied to the base pin, which then causes a current to flow between the emitter-collector lattice. This current then provides a reference voltage to the base and emitter-collector pins. During the emitter-collector stage, a voltage is applied to the emitter-collector pins and causes a current to flow through the transistor. This current then provides a control signal that allows the device to perform its intended purpose.In summary, the NSVBA114EDXV6T1G is a pre-biased, bipolar junction transistor array. This device is suitable for use in low-current switches, line protection, and signal conditioning circuits, as well as AC/DC converters and power supplies. It operates in the base and emitter-collector stages in order to achieve its intended purpose.

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