NSVBC847BLT3G Discrete Semiconductor Products |
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Allicdata Part #: | NSVBC847BLT3GOSTR-ND |
Manufacturer Part#: |
NSVBC847BLT3G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 45V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 225m... |
DataSheet: | NSVBC847BLT3G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03715 |
30000 +: | $ 0.03483 |
50000 +: | $ 0.03096 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 225mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSVBC847BLT3G is a single Bipolar Junction Transistor (BJT). It\'s a NPN transistor with a Pb-Free package and a high collector-emitter breakdown voltage. It basically consists of two terminals, namely, the base and the collector, for detecting the desired electric current or voltage and controlling the current amplified by the collector.
This type of transistor is mainly used as an amplifier and as a switch in analog circuits. The working principle of the NSVBC847BLT3G is based on the movement of charge carriers between the emitter and the collector terminals, in the presence of both a base current and base-emitter voltage. When the emitter-base junction is forward biased, the minority carriers will be injected into the base region. These carriers are then attracted by the electric field towards the collector region. This causes an increase in the current flow through the collector-emitter circuit and enables the transistor to amplify the signal.
In addition, the NSVBC847BLT3G also has a high breakdown voltage capability, which is quite useful for applications that need robust switch, low saturation voltage and low noise. This makes this transistor ideal for signal amplification and timing applications, such as in TV signal amplifiers and signal modulation sources. Moreover, since it has a Pb-free package, it’s also environmentally friendly, making it the perfect choice for industrial applications.
The NSVBC847BLT3G is an excellent device for discrete transistors and it can offer linear and low-distortion amplification. It\'s also quite versatile and can be used as a BJT switch to switch high/low potentials between different components in a circuit. Furthermore, its high versatility also makes it suitable for integrated circuits and systems engineering, as it can be effectively used to control the logic operationsin computers, communication systems and automation.
Moreover, due to its low power consumption, it can also be used in low-voltage applications. The transistor can also be used to gain control of various small devices, such as motors and relays, as they require very little energy. Furthermore, because of its superior features, the NSVBC847BLT3G is often found in consumer electronics, such as smartphones and portable media players, for improving audio performance.
In conclusion, the NSVBC847BLT3G is a very useful and versatile single bipolar junction transistor that can be used for a variety of applications. Its high collector-emitter breakdown voltage, low power consumption and low noise makes it perfect for signal amplification, timing and switching applications. Furthermore, it’s also ideal for integrated circuits, consumer electronics and industrial applications due to its Pb-free package.
The specific data is subject to PDF, and the above content is for reference
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