NSVMBT3904DW1T3G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	150mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363

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Introduction

NSVMBT3904DW1T3G is an array of transistors and a bipolar junction transistor (BJT). It features two electrically isolated BJTs for amplifying and switching signals, N-channel and P-channel integrated power FETs (MOSFETs), and an array of low-level JFETs for signal and video processing. It is designed for general-purpose transistor specifications and is commonly used in discrete, digital, and integrated circuit applications.

Application Field

The NSVMBT3904DW1T3G is a versatile transistor array focused on customers who require low power usage as well as high signal integrity. The device has a wide range of uses including audio mixers, amplifiers and filters, medical instrumentation, and audio and video signal processing.Due to its low power, the NSVMBT3904DW1T3G can be used in portable or battery-operated devices such as portable media players and wireless communications systems. Its high signal integrity is well-suited for telecommunications, measuring instruments, and other communications systems where signal integrity is important.The device also has an array of JFETs for signal and video processing, which is beneficial for applications such as driving displays, audio processing, and video capture or streaming.

Working Principle

The NSVMBT3904DW1T3G array consists of two electrically-isolated N-channel field-effect transistors (FETs), each pair of which behaves in a manner similar to the common-emitter of a conventional BJT. Like a BJT, the FET has the capability to control and amplify current. Generally, these devices operate in the ‘active’ region, where the emitter-base voltage (Veb) is between 0V and +1V, while the collector-base voltage (Vcb) is between +5V and +20V. The ‘RF’ transistor works similarly to the common-emitter transistor, with the drain and source playing the roles of collector and emitter, respectively. This makes control of the current flowing through the active region easier, allowing for better accuracy in current amplification and control. The integrated N-Channel MOSFETs provided in the NSVMBT3904DW1T3G enable increased power delivery for applications that require switching or controlling higher current levels. These MOSFETs provide low on-state resistance along with low gate charge, making them ideal for switching large currents. The JFETs in the array are used for signal and video processing, making the device suitable for driving displays, audio processing, and video capture or streaming. They have the ability to switch large currents quickly, making them efficient and reliable for high-speed switching applications. The JFETs can also be used as low-level devices for amplifier stages in analog electronics.

Conclusion

The NSVMBT3904DW1T3G is an array of transistors and a BJT, designed for general-purpose transistor operating specifications. It can be used in portable and battery-operated devices due to its low power consumption as well as in telecommunications systems and measuring instruments due to its high signal integrity. Its integrated power FETs enable increased power delivery and the JFETs in the array enable efficient and reliable high-speed switching. The device can also be used for driving displays, audio processing, and video capture or streaming.

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