NSVMMBT6429LT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NSVMMBT6429LT1G is a SOT-323 package, bipolar junction transistor (BJT) from NXP Semiconductor’s product portfolio, where this part is able to operate as a single element. It is also capable of working in multiple configurations such as NPN, PNP, Darlington, as well as Schottky, with collector currents ranging up to 0.5 A (500 mA). When looking at the general purpose transistor, the NSVMMBT6429LT1G offers a wide range of operating voltages and it is designed for use in various applications at a maximum of 65V reverse voltage. As for its thermal parameters, the NXP Semiconductor SOT-323 packaged transistor has Pd of 625 mW, meaning it can dissipate this amount of power before it starts to overheat due to too much current/voltage. Additionally, this transistor also has a moderate maximum operating temperature of 150°C, which helps to make it a suitable for moderately-temperature applications. The NSVMMBT6429LT1G is used commonly for general purposes, such as switching, input/output buffer and interface. This type of BSOT is specially designed to offer a simple solution whenever super small and space-saving switching devices are needed. For example, it can be used in line isolation applications thanks to its high breakdown voltage and solid-state isolation that allows controlling cross talk and stable data transmission. It is also used in voltage switching circuits since its minimum saturation voltage of 350 mV allows it to switch voltages with relative ease. As a NPN device, the NSVMMBT6429LT1G BJT is also suitable to be used as an active mixer, amplifier or as a driver for thermal printer head or even as a co-processor for very low power electronic applications.Regarding its working principle, the NXP Semiconductor SOT-323 packaged transistor uses the unadjusted Noval base. This technique makes possible the fabrication of this particular transistor at the most minimum cost by operating the collector with a higher current, making it a good choice for many products with tight budgets where a monolithic device can not be used. The NSVMMBT6429LT1G bipolar junction transistor works as an electronic switch, basically using the collector current magnitude as a control signal. When it is turned on, a base current must be applied and it will not be allowed to flow until positive voltage is sensed across the base-emitter junction. The transistor will stay in the on state, while when the base current flow is eliminated, the transistor moves to the off state. The use of this type of Bipolar Junction Transistor (BJT) is also enhanced by its very low input capacitance of around 35 pF, allowing it to achieve high switch speeds. Overall, the NSVMMBT6429LT1G can be used in a wide range of applications due to its wide range of operating parameters and its low cost, making it a perfect fit for many projects.

The specific data is subject to PDF, and the above content is for reference