NTB22N06LT4

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	5V
Rds On (Max) @ Id, Vgs:	65 mOhm @ 11A, 5V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 5V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	690pF @ 25V
FET Feature:	--
Power Dissipation (Max):	60W (Tj)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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NTB22N06LT4 is a type of transistor, which belongs to FETs, MOSFETs - Single. Its application field and working principle can be summarized as below.Application FieldNTB22N06LT4 is a N-channel enhancement-mode field effect transistor (FET) with low on-resistance at 4.5V gate-source voltage. Therefore, it is suitable for general purpose switching and amplifier applications. This type of transistor also has low input capacitance, making it ideal for use in high-speed logic and high-frequency operation.NTB22N06LT4 has a minimum on-resistance of 22R and a breakdown voltage of 25V. It features very low gate threshold voltage, which makes it suitable for use in interface circuits, high frequency, analog and high power applications. Due to its low on-resistance, NTB22N06LT4 is also a good choice for voltage regulation applications. Working PrincipleThe operation of NTB22N06LT4 differs from other transistors due to the presence of a metal-oxide-semiconductor Field-Effect-Transistor (MOSFET) gate. MOSFETs are capable of creating an electronic switch that offers low resistance between source and drain and low capacitance, allowing it to have high switching speed and low power consumption.The operation of NTB22N06LT4 begins by applying a positive voltage to the gate. This creates an electrostatic charge in the oxide, which in turn creates a potential barrier between the source and drain terminals of the transistor. As the voltage is increased, the potential barrier decreases, allowing current to flow between the source and drain, thus turning off the device. NTB22N06LT4 is designed to operate at a gate voltage of 4.5V, at which the device’s on-resistance reaches its minimum. NTB22N06LT4 is also designed to have a low pinch-off voltage, which allows for an effective rate of power dissipation over a wide range of gate voltages.In terms of static and dynamic characteristics, NTB22N06LT4 has low gate-source capacitance, which helps reduce the power consumption in high frequency operations. It also has a low input capacitance and a fast switching speed, making it suitable for use in high-speed logic circuit applications.In conclusion, NTB22N06LT4 is a N-channel enhancement-mode transistor with low on-resistance at 4.5V gate-source voltage, making it suitable for general purpose switching and amplifier applications. It is a good choice for voltage regulation applications due to its low on-resistance and low pinch-off voltage. It also features low input capacitance and fast switching speeds, making it suitable for high-speed data rate and fast switching applications.

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