Allicdata Part #: | NTB25P06-ND |
Manufacturer Part#: |
NTB25P06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 27.5A D2PAK |
More Detail: | P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D... |
DataSheet: | NTB25P06 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 27.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 82 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 1680pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 120W (Tj) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NTB25P06 Application Field and Working Principle
NTB25P06 is a type of single N-channel MOSFET. It is a commonly used power MOSFET, especially suitable for various types of switching applications. In this article, we’ll discuss the application field and working principle of NTB25P06.
Application Field of NTB25P06
NTB25P06 features a low on-resistance, fast switching speed, safety, and low power drain, making it an ideal choice for many power applications. It is widely used in a variety of industries, including industrial, automotive, aerospace, and consumer electronics. It is most common application fields include:
- Switch Mode Power Supplies
- DC-DC Voltage Converters
- UPS Systems
- Audio Amplifiers
- Motor Controllers
- SMPS Control
- Solar Inverters
- LED Lighting
- Medical Imaging Equipment
- Battery Chargers
Due to its low on-resistance, fast switching speed and low power drain (allowing for higher efficiency in applications where power is a concern) and its wide variety of applications, NTB25P06 offers superior performance compared to other power MOSFETs.
Working Principle of NTB25P06
The NTB25P06 is a single N-channel MOSFET, which means that it uses source, gate and drain terminals with one p-channel and one n-channel. The source is connected to the ground, and the drain is connected to the power supply. The gate is connected to the control voltage and can be used to control the current flow in the MOSFET. When the gate voltage is positive relative to the source, the MOSFET conducts and current is allowed to flow between the source and the drain. When the gate voltage is negative relative to the source, the MOSFET is off and no current can flow between the source and the drain.
The NTB25P06 is an enhancement-type MOSFET, meaning that its gate terminal can consciously control the current flow between the source and the drain. That is, compared to depletion-type MOSFETs, which are forced to conduct current, the NTB25P06 can be turned on or off as needed by adjusting the gate voltage. This makes NTB25P06 ideal for various switching applications, such as DC-DC voltage converters, motor controllers, and LED lighting.
The NTB25P06 is an ideal choice for switching power applications due to its low on-resistance, high current capacity, and fast switching speed. Additionally, its built-in paralleled diodes and high-power Impedance Matching technologies allow for surge protection and impedance mismatch prevention. This makes it an reliable and safe choice for switching power applications.
Conclusion
NTB25P06 is a single-channel MOSFET that is ideal for a wide range of power applications, including switch mode power supplies, DC-DC voltage converters, UPS systems, audio amplifiers, motor controllers, SMPS control, solar inverters, LED lighting, medical imaging equipment, and battery chargers. It features a low on-resistance, fast switching speed, safety, and low power drain, and also includes built-in paralleled diodes and high-power Impedance Matching technologies for surge protection and impedance mismatch prevention.
The specific data is subject to PDF, and the above content is for reference
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