NTB22N06T4

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	60 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	700pF @ 25V
FET Feature:	--
Power Dissipation (Max):	60W (Tj)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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NTB22N06T4 Application Field and Working Principle

NTB22N06T4 is a FET (Field-Effect Transistor) type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It belongs to the single type of FETs. Each FET is composed of a source, gate, drain, and body. The NTB22N06T4 is a type of FET that only has a single vertical channel, usually made of semiconductor material Si (silicon).The primary purpose of FETs is to act as switches in electric circuits, while the gate terminal allows the user to control the gate operation. Specifically, the NTB22N06T4 device consists of N-channel MOSFETs with a very low on-state resistance, low input capacitance, and very fast switching speed. The N-channel type of FETs is able to provide an excellent linear current transfer, which makes them ideal in applications that require a signal to be amplified with low distortion. The low input capacitance ensures that the signal remains true even when switching frequencies are high. At the source terminal, the electric power enters the circuit, and the electric power carries current throughout the circuit when the gate gate is open. When the gate is opened, the electric current will move from the source terminal to the drain terminal. This is known as the "on" state. When the gate is closed, the electric current is blocked from moving from the source to the drain terminal. This is known as the "off" state.Due to the low on-state resistance of the NTB22N06T4, the power dissipation is low and the device has an excellent immunity towards the electrostatic discharge and latch-up effect. It has an excellent noise immunity due to its low input capacitance and the ability to quickly switch states, making it ideal in situations where high switching frequencies are needed. The NTB22N06T4 has many real-world applications. The device can be used for switching applications, such as the control of speed, direction and switching of motors in industrial applications or in consumer appliances. It can also be used in consumer electronics and digital signals, such as mobile phones and data communication systems. Furthermore, FETs and MOSFETs can be used in radio frequency (RF) amplifiers and RF switches. The NTB22N06T4 can also be used as a logic inverter and as an amplifier in audio systems. It is important to note that when using the NTB22N06T4, the maximum junction temperature must not exceed 125 degrees Celsius. If the junction temperature is exceeded, the device may be damaged. As with other electronic devices, the NTB22N06T4 must be carefully handled and stored, especially when the device is exposed to adverse environmental conditions such as humidity and temperature. The NTB22N06T4 is a high-performance FET, capable of providing excellent electrical performance in many real-world applications. Its unique features make it ideal for digital and analog circuits, especially for applications that require very low distortion, low noise, and high switching speeds. With its various capabilities and applications, the NTB22N06T4 is sure to provide reliable performance in its intended applications.

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