NTB23N03RG Allicdata Electronics
Allicdata Part #:

NTB23N03RG-ND

Manufacturer Part#:

NTB23N03RG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 25V 23A D2PAK
More Detail: N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D2...
DataSheet: NTB23N03RG datasheetNTB23N03RG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
FET Feature: --
Power Dissipation (Max): 37.5W (Tj)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The NTB23N03RG is a single n-channel enhancement mode power MOSFET. It is created using advanced TrenchFET technology, and is designed to provide unbeatable performance and reliability. This device is ideal for switch-mode power supplies, motor drives, and other applications that require high-reliability and performance.

The NTB23N03RG has a very low on-state resistance, making it ideal for higher efficiency and lower power dissipation applications. Its low capacitance and gate charge (Qg) make it well-suited for switching applications, particularly those that require a faster switching speed. This device also has a very low leakage current, so it is well suited for applications that require very low power draw or low power consumption.

The NTB23N03RG has a drain-source voltage (VDS) rating of 20V, a maximum junction temperature of 175°C, and a continuous drain-source current rating of up to 23A. It also has a maximum drain-source on-state resistance of 0.017 ohms, a gate threshold voltage of 2.4V, and a gate-source voltage (VGS) range of -4V to +20V. All of these features make the NTB23N03RG an ideal choice for a wide variety of applications.

The main application fields of the NTB23N03RG include motor drives, switch-mode power supplies, and other high-performance applications that require robust and reliable performance. Its low on-state resistance allows it to be used in applications that require higher efficiency and lower power dissipation. Its low capacitance and gate charge also make it well-suited for applications that require high switching speeds, such as motor drives and power distribution systems.

The working principle of the NTB23N03RG is based on the transfer of charge between its gate and drain terminals through an insulated-gate field-effect transistor. When the gate voltage is increased, the resistance between the drain and source terminals decreases, allowing the voltage to drop across the device. This increase in drain current is called an inversion layer. The device can be used as an amplifier, switching regulator, or a voltage-controlled switch.

The NTB23N03RG is an excellent choice for a wide variety of applications due to its low on-state resistance, low capacitance and gate charge, and excellent thermal stability. It is well-suited for switching applications and motor drives, as well as other high-performance applications that require robust and reliable performance.

The specific data is subject to PDF, and the above content is for reference

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