| Allicdata Part #: | NTP60N06OS-ND |
| Manufacturer Part#: |
NTP60N06 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 60A TO220AB |
| More Detail: | N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Throug... |
| DataSheet: |  NTP60N06 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.4W (Ta), 150W (Tj) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3220pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The NTP60N06 is a N-Channel Enhancement-Mode Field-Effect Transistor (FET) that is specifically designed to minimize the on-state resistance while offering the fast switching performance required of modern power applications. It is manufactured using an advanced dual-cell trench-cell process, which is designed to optimize switching performance and reduce gate-charge. Built with silicon-chromium technology, the NTP60N06 offers excellent levels of efficiency and reliability.
N-Channel devices are widely used in consumer applications and industrial, lighting and automotive applications. The NTP60N06 is a popular choice for these applications, as it offers fast switching performance, low on-resistance, and excellent protection against short-circuits and overloads. The device features a low voltage gate threshold, making it a good choice for lower-voltage applications.
The NTP60N06 is primarily used in AC/DC power converters, motors drives and switch-mode power supplies. These types of applications require fast, high-side current-operation. The device is able to produce fast, low-latency switching times, allowing the user to obtain excellent efficiency under a wide range of operating conditions. It also features an advanced built-in protection system, optimizing safety and protection.
The device operates on the principle of field-effect transistor (FET) technology. FETs are an essential element of many switching applications as they are able to control the current flow through a conducting channel. As the voltage applied to the gate increases, electrons accumulate in the channel, introducing a barrier that restricts current flow between the source and drain. This property allows FETs to be used in applications that require fast on/off switching, such as power supplies and motor drives.
The NTP60N06 features a maximum drain-source voltage of 60 V, ideal for many common applications. It offers impressive performance in terms of switching time and gate-charge, making it suitable for a range of higher-current applications. This device is an ideal choice for applications that demand efficient and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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