Allicdata Part #: | NTP6413ANGOS-ND |
Manufacturer Part#: |
NTP6413ANG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 42A TO-220AB |
More Detail: | N-Channel 100V 42A (Tc) 136W (Tc) Through Hole TO-... |
DataSheet: | NTP6413ANG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 42A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTP6413ANG is an enhancement-mode single N-Channel MOSFET and is commonly used in applications such as power management, energy saving and switching circuits. Its high-performance feature set and low on-resistance make it suitable for a multitude of applications.
The NTP6413ANG is a monolithic single N-Channel MOSFET with high performance and low on-resistance. It features a 150V breakdown voltage and a 1.25 ohm on-resistance which is suitable for power management, energy saving and switching circuits. The NTP6413ANG also has a fast switching speed, which allows it to efficiently switch between power states quickly.
The NTP6413ANG is commonly used in power management applications, where it is often used to switch on and off a load at predetermined intervals. This can be used to reduce energy consumption, as the load is only powered when necessary, thus saving energy. The fast switching speed of the NTP6413ANG also makes it suitable for energy saving applications, where it can be used to quickly switch between different power levels or modes. Furthermore, the low on-resistance of the NTP6413ANG also makes it ideal for switch circuits, where it can be used to switch low voltages or currents such as in audio systems or lighting circuits.
The working principle of the NTP6413ANG is based upon the concept of MOSFETs (metal-oxide-semiconductor field effect transistors). A MOSFET is a type of transistor, which is made up of a Gate, a Drain, and a Source. The Gate is the control terminal of the device that receives an input voltage in order to control the conduction of the device. The Drain and Source terminals are the output terminals of the device and are used to transfer current out of or into the device. The MOSFET is a voltage-controlled device, meaning that the conduction of the device is determined by the input voltage applied to the Gate terminal.
When voltage is applied to the Gate, an electric field is created between the Gate and Drain, which causes a threshold voltage to be achieved. Once this threshold voltage is reached, the NTP6413ANG is considered ‘on’, and current can flow freely between the Drain and Source terminals. If the voltage applied to the Gate drops below the threshold voltage, the NTP6413ANG is considered ‘off’ and no current can flow between the terminals.
The NTP6413ANG is well suited to a broad range of applications due to its high-performance features and low on resistance. Its fast-switching speed and low breakdown voltage make it ideal for power management applications, where it can switch power states quickly in order to save energy. Its low on resistance also makes it ideal for switching circuits, where it can provide reliable switching of low voltages or currents such as in audio systems or lighting circuits.
The specific data is subject to PDF, and the above content is for reference
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