Allicdata Part #: | NTP60N06LOS-ND |
Manufacturer Part#: |
NTP60N06L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 60A TO220AB |
More Detail: | N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Throug... |
DataSheet: | NTP60N06L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 150W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3075pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 30A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTP60N06L is a type of FET, or field-effect transistor, which is a type of semiconductor device typically used for high-speed switching and amplification. It is a depletion-mode MOSFET which is optimized for low-noise operation, making it suitable for applications that require low-noise signal processing. These types of transistors are often found in high frequency applications, such as radio transmitters, radio receivers, and other electronic circuits that require efficient signal processing.
The NTP60N06L is a N-channel enhancement-mode power MOSFET that utilizes a thick-oxide region and is well suited for use in power switching and high-speed signal applications. This type of transistor is often used in applications such as motor-control circuits, solenoid drivers, relay drivers, and DC-DC converters. It has an adjustable threshold voltage range of -1.5 V to -5 V, making it highly versatile in terms of available power output.
The working principle of the NTP60N06L involves using a gate potential to control the flow of electrons through the device. When no gate potential is applied, a depletion channel is formed in the MOSFET and the transistor is in its off-state. When a positive gate potential is applied, it increases the current flow through the N-channel, which in turn turns on the transistor and allows current to pass through it. This principle allows for the modulation of current through the device and is used for high-speed switching and signal processing.
Due to its ability to switch high current, the NTP60N06L is an attractive solution for a wide variety of power sensing, control, and electronic applications. It is often used in AC-DC converters, switching power supplies, computer applications, telecommunications, and many other kind of industrial and consumer electronics. The transistor is highly robust and is also suitable for use in high temperature and linear applications. It is able to handle currents up to 60 A and has a maximum on-state resistance of 0.036 ohms, making it suitable for use in power switching and motor control applications.
The NTP60N06L MOSFET is a very versatile transistor, making it ideal for use in a variety of applications. It is capable of providing high-power capabilities while also featuring low-noise operation. It can be used in both power switching and signal processing applications, making it suitable for use in a wide range of electronic products. The MOSFET is also highly robust, allowing for consistent performance in high temperature and linear applications, making it an attractive solution for many application fields.
The specific data is subject to PDF, and the above content is for reference
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