NTP6410ANG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTP6410ANG is an advanced N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is designed for low-voltage high-efficiency applications. The NTP6410ANG has a high-density trench structure that is optimized for switching performance and a superior low-RDS(on) to maximize efficiency. With its high voltage blocking capability, it is ideal for applications where a low on-resistance is essential to improve efficiency and reduce power loss.

The NTP6410ANG is used in a wide range of applications, including lighting, motor, servo drivers, solar panel inverters, LED drivers and boost applications. It is especially suited for high-frequency switching applications where the low on-resistance will lower power losses and improve efficiency. The NTP6410ANG has a maximum drain-source voltage of 60V and a low-threshold voltage, making it suitable for higher power applications.

The NTP6410ANG is a sensitive gate device, meaning that a small amount of current can be used to control a larger amount of current. The low-threshold voltage enables a wide range of gate-source voltages, allowing for it to be used in a variety of voltage ranges. The gate threshold voltage (Vgs(th)) is the voltage value at which the device begins to conduct. In the case of the NTP6410ANG, the Vgs(th) is from -2V to +2V providing flexibility for different gate-source voltage levels.

The NTP6410ANG has an on-resistance, RDS(on), as low as 0.6Ω. Lowering this resistance, decreases the switching losses and thus, increases the efficiency of the system. The NTP6410ANG also has a very low gate-charge, Qgs, which minimizes switching losses and the effects of variation of gate-source voltage on the drain-source voltage. The device is also capable of suppressing peak switching current with its tight channel control in the linear region.

The NTP6410ANG can be used in applications requiring a high speed, low RDS(on), and low gate-charge. It is ideal for battery-powered, energy-saving applications. It is also highly suitable for high-frequency, low-voltage switching applications due to its low input capacitance, and fast switching speeds. Moreover, it is designed for excellent drain-source voltage blocking capability, making it applicable to applications requiring a high voltage blocking capability.

In summary, the NTP6410ANG is an advanced N-Channel MOSFET designed for low-voltage, high-efficiency applications. Its low-threshold voltage, allowing for wide range of gate-source voltages, low on-resistance, and fast switching speeds make it suitable for applications that require a low power loss and improved efficiency. Its high voltage blocking capability makes it an ideal choice for such applications.

The specific data is subject to PDF, and the above content is for reference