
Allicdata Part #: | NTP60N06LGOS-ND |
Manufacturer Part#: |
NTP60N06LG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 60A TO220AB |
More Detail: | N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Throug... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 150W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3075pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 30A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTP60N06LG is a 60-V N-Channel Enhancement-Mode Power MOSFET that operates with an ID of 60A (TC=25°C) and RDS(ON) of 3.6 milliohms (VGS=10V). N-Channel MOSFETs (Metal Oxide Semiconductor Field Effects Transistors) are widely used in electronic applications such as power switches, timers, amplifiers, current sensing, DC motors and audio amplifiers. NTP60N06LG devices are optimized for power management, temperature control, and current sensing applications.
The basic principle of operation of an N-Channel MOSFET is similar to that of a JFET (Junction Field Effect Transistor). An electric field is created at the junction of the drain and source due to the applied gate voltage, which results in an resistance that can be adjusted by varying the gate voltage. The drain-to-source resistance can be reduced or increased depending on the gate voltage.
The gate voltage (VGS) is used to control the flow of current between the drain and source terminals of an N-Channel MOSFET. When the gate voltage is greater than the threshold voltage (Vth), the device turns on, allowing current to flow from the drain to source. When the gate voltage is less than the threshold voltage, the device is off, allowing no current to flow.
NTP60N06LG devices can operate between –55°C to +150°C junction temperatures due to their improved power dissipation capability and higher operating temperature range. This makes them suitable for use in industrial and automotive applications, especially in applications which require temperature-resistant components.
NTP60N06LG devices offer low gate and thermal resistances, low on-resistance, low input capacitance, and low input gate charge, providing designers with a highly efficient, cost-effective solution for power management applications. The device also offers excellent avalanche characteristics and is designed for both low-side and high-side switch applications.
NTP60N06LG devices are also suited for high-speed, high-voltage pulse switching and current sensing applications. They feature fast switching capabilities and good thermal performance, making them a suitable choice for high-frequency switching applications. The device provides excellent transient response, preventing spurious switching when transients occur.
Overall, NTP60N06LG devices are a cost-effective, high-performance solution for power management and temperature control applications. They provide excellent thermal performance, low input capacitance, low on-resistance, and low input gate charge. They are also well-suited for high-speed, high-voltage pulse switching and current sensing applications.
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