| Allicdata Part #: | NTP6411ANGOS-ND |
| Manufacturer Part#: |
NTP6411ANG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 72A TO-220AB |
| More Detail: | N-Channel 100V 77A (Tc) 217W (Tc) Through Hole TO-... |
| DataSheet: |  NTP6411ANG Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 217W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 72A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 77A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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NTP6411ANG is a single field-effect transistor specially designed for use in amplifying and switching applications. It is particularly well suited to use in circuits handling low-level signals. Its relatively low switching threshold voltage allows it to be used in sensitive applications such as sensing small changes in temperature. It has a drain-source breakdown voltage of 100V and can operate at currents up to 30mA.
The NTP6411ANG is a n-channel enhancement-mode MOSFET. It consists of an 800nm-diameter gate that is surrounded by a “body” made from silicon. The gate is connected to the drain and source of the device via an ohmic contact. The gate is insulated from the body by an oxide layer. The oxide layer has a capacitance which allows the device to switch on and off quickly and maintain its high frequency properties.
The NTP6411ANG operates by creating a potential difference between the gate and the body. A positive voltage applied to the gate will create an electric field that attracts free electrons away from the body and towards the gate. This increases the number of electrons on the gate and decreases the number of electrons on the body, creating an inversion layer in which there are more positively charged “holes” than electrons. This reduces the overall resistance between the drain and source and increases the current flowing through the device.
The NTP6411ANG can be used in a variety of applications, including audio amplifiers, voltage regulators, power supplies, motors, and low-noise amplifiers. It is also well suited to use in digital circuits that process small amounts of data quickly, such as CAN bus systems. The device is highly reliable and is rated for a guaranteed operating life of 1 million operating hours.
The NTP6411ANG is a highly efficient and reliable device that can be used in a variety of applications. Its low switching threshold voltage and high current rating make it an ideal choice for sensitive applications. Its reliable operation and long life make it a dependable choice for industrial applications. With its small size and low cost, the NTP6411ANG is an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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