NTR1P02LT1G Allicdata Electronics

NTR1P02LT1G Discrete Semiconductor Products

Allicdata Part #:

NTR1P02LT1GOSTR-ND

Manufacturer Part#:

NTR1P02LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 1.3A SOT-23
More Detail: P-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount S...
DataSheet: NTR1P02LT1G datasheetNTR1P02LT1G Datasheet/PDF
Quantity: 33000
Stock 33000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 5V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V
Series: --
Rds On (Max) @ Id, Vgs: 220 mOhm @ 750mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NTR1P02LT1G is a type of Field Effect Transistor (FET). It is a Single FET (SFET) and it is known for its wide range of applications and useful characteristics. It is a very versatile type of FET and can be used in various applications, making it an ideal choice for a variety of applications.

The NTR1P02LT1G FET operates in a similar way as other FETs. It uses an electric field to control the flow of current between two terminal electrodes. It consists of three major parts including the source, gate, and drain. The source electrode is connected to the negative side of a power source and provides a source of electrons. The gate electrode is connected to the positive side of the power source and is used to control the current flow between the source and drain. The gate is also used to control the voltage applied to the source and drain. Lastly, the drain electrode is connected to the positive side of the power source and is used to collect electrons from the source.

The NTR1P02LT1G FET is used for numerous applications such as amplifiers, switches, power supplies, circuit boards, telecommunications equipment, and computers. It is well-suited for high-speed, low-power applications such as RF amplifiers, switching circuits, and high input impedance circuits. It can also be used in digital logic circuits such as logic controllers, memory chips, and logic circuits.

The NTR1P02LT1G FET has numerous features that make it a desirable choice for many applications. One of its most impressive features is its high switching speed. This is beneficial because it can switch faster than other FETs, allowing for quicker operations. In addition, it has a low on-state resistance, which is useful for low voltage applications. It also has a high input impedance, which helps protect sensitive components from damage due to the current from the gate.

The NTR1P02LT1G FET also has a wide operating temperature range. This ensures that it can operate in various conditions and can be used in places with extremely high or low temperatures. It is also known for its high durability and reliability, making it a popular FET for many applications.

The NTR1P02LT1G FET is an excellent choice for many applications due to its wide range of features, low on-state resistance, high input impedance, and wide operating temperature range. It is a great choice for digital logic circuits, RF amplifiers, switching circuits, and other high speed and low voltage applications. With its impressive features and versatility, the NTR1P02LT1G FET is one of the best FETs available and is suitable for a variety of uses.

The specific data is subject to PDF, and the above content is for reference

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