NTR1P02T1G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.3V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	400mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	165pF @ 5V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	2.5nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	180 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NTR1P02T1G is an advanced metal-oxide-semiconductor field-effect transistor (MOSFET) developed by NTRI, a leader in semiconductor technology. The device is designed for a wide range of applications, including power management, communications, and consumer electronic products. The device is a low on-resistance, low-voltage, small-footprint, single MOSFET that can operate from a supply voltage of up to 18 V.This device is based on a P-channel MOSFET architecture and offers low on-resistance as well as low body diode forward voltage drops. These features make the device ideal for applications such as battery management systems, switching power supplies, and power amplifiers. The device also features an enhanced thermal performance which enables high performance and low thermal resistance across the entire operating temperature range.The NTR1P02T1G is a single MOSFET device that is built using an epitaxial wafer structure. This structure is used to form the P-type and N-type regions in the device substrate. The P-type region is the source, and the N-type region is the drain. The device substrate is isolated from the gate material by a gate oxide layer, which acts as an insulator between the gate and the source and drain.In operation, a voltage applied to the gate controls the conductivity of the device. The gate voltage causes electrons to flow between the source and the drain, thus creating a current. This current is proportional to the gate voltage, which can be used to regulate and control the flow of electricity through the device.In addition to its control capabilities, the NTR1P02T1G offers a substantial power dissipation capability, which is necessary in high-power, high-temperature applications. The unit is rated at 1.2 Watts and includes an advanced PowerPAK structure, which dissipates the power losses associated with MOSFET operations.The NTR1P02T1G is a single MOSFET device designed for high-performance, low-voltage applications. The low on-resistance and low-voltage requirements make the device ideal for power management, communications, and consumer electronic products. The device also offers increased power dissipation, which is necessary for higher-power applications, and the advanced PowerPAK structure allows for efficient thermal management. This makes the device an ideal solution for various electronic applications.

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