Allicdata Part #: | NTR1P02T1OS-ND |
Manufacturer Part#: |
NTR1P02T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 1A SOT-23 |
More Detail: | P-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount SOT... |
DataSheet: | NTR1P02T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 165pF @ 5V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTR1P02T1 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device which has a single, insulated gate formed by doped silicon dioxide that is used to control the conductivity between the source and the drain. This type of transistor is also referred to as an IGFET (Insulated-Gate FET) device, as the electric field that is generated by the gate is used to modulate the conductivity of the device.
MOSFETs are commonly used in both digital and analog electronic circuits and can be used in a wide variety of applications. These include power switching, voltage regulation and signal conditioning. In digital circuits, MOSFETs are used to drive loads, or act as switches to control the current. In analog circuits, they can be used to amplify analog signals or voltage.
The working principle of the NTR1P02T1 device is based on the field-effect technology that utilizes the action of free electrons and holes in a semiconductor material to produce a voltage. This voltage is then used to control the operation of the device. The gate is used to control the current by applying a voltage across the gate and drain. This voltage induces a current in the channel formed between the source and the drain, which is then used to control the current of the device. By manipulating the voltage across the gate and drain, one can control the current through the device.
NTR1P02T1 transistors are used in a wide variety of applications, including power systems, audio power amplifiers, and voltage conversion circuits. In power systems, they are used to switch large amounts of current, allowing the system to operate more efficiently. In audio power amplifiers, they are commonly used as the input stage of an amplifier, allowing the amplifier to react quickly to changes in the input signal. Finally, in voltage conversion circuits, MOSFETs can be used to convert low voltage signals into higher voltage signals.
In conclusion, the NTR1P02T1 is a single MOSFET device which utilizes field-effect technology to control the current flowing between the source and the drain. It can be used in a variety of applications, including power systems, audio power amplifiers, and voltage conversion circuits. By manipulating the voltage across the gate and drain, one can control the current through the device.
The specific data is subject to PDF, and the above content is for reference
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