Allicdata Part #: | NTR1P02T3G-ND |
Manufacturer Part#: |
NTR1P02T3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 1A SOT-23 |
More Detail: | P-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount SOT... |
DataSheet: | NTR1P02T3G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 165pF @ 5V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTR1P02T3G is a single N-channel enhancement mode power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). This device is specifically designed and packaged to withstand extreme operating temperature, making them suitable for use in power supply applications that require reliable operation in harsh conditions. MOSFETs are unipolar transistors, meaning they only operate with a single type of electrical charge, as opposed to bipolar transistors, which can conduct current with two types of charges. This allows them to be used in a variety of applications where precise, efficient, and reliable control of current is essential.
The NTR1P02T3G is a small surface-mount device (SMD) that is capable of delivering up to approximately 20 amperes of continuous drain current. It has a maximum drain-to-source voltage of 30 volts, drain-source ON-resistance of 4 milliohms, and a threshold voltage of 1.5 volts. It can operate at temperatures ranging from -55°C to 150°C, making it ideal for applications in automotive, industrial, and military electronics.
The NTR1P02T3G is typically used in power supply and interface applications. These include DC-DC boost converter, synchronous buck converters, inverter, uninterruptible power supply (UPS), timing circuits, and laser diode drivers. It is also used to control and regulate the current in low-voltage applications such as lighting, motor control, power supplies, and battery chargers. The device can also be used to switch and regulate the supply of power to DSL and cable modems.
The working principle of the NTR1P02T3G is fairly simple. When a voltage is applied between the drain and source electrodes, electrons are able to pass through the channel, creating a current through the device. This in turn creates a voltage drop across the source-drain junction, which is proportional to the drain current. The current through the channel is controlled by the gate voltage; higher gate voltages will open up the channel to allow more current to flow. Additionally, increasing the drain-source voltage will increase the amount of current that can flow. Lower gate voltages, on the other hand, will reduce the amount of current that can flow.
The NTR1P02T3G is a highly versatile power MOSFET that is well-suited for a wide range of applications where precise current control and reliable operation are required. It is an ideal solution for power supply and interface applications, as it can deliver a continuous drain current of up to 20 amperes and operate at extreme temperatures. It is a reliable, cost-effective, and easy to implement component for any circuit design.
The specific data is subject to PDF, and the above content is for reference
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